Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 197/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 40V 74A TO-220AB |
2,970 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 56A (Ta) | 4.5V, 10V | 16mOhm @ 37A, 10V | 3V @ 100µA | 224nC @ 10V | ±20V | 7676pF @ 25V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
2,988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 9400pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 130A TO-220AB |
6,264 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-220AB |
7,272 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 45A TO-262 |
8,604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 45A (Tc) | 10V | 48mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB |
7,758 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 86A IPAK |
3,978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | ±20V | 2150pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 58A IPAK |
7,956 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | ±20V | 1350pF @ 15V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 55V 150A D2PAK-7 |
8,316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET-S1 |
5,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 7.8mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1010pF @ 13V | - | 1.8W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V 19A DIRECTFET-SQ |
3,400 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 84A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | ±20V | 1810pF @ 13V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 25V 37A DIRECTFET-MX |
2,646 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 197A (Tc) | 4.5V, 10V | 1.3mOhm @ 37A, 10V | 2.35V @ 150µA | 75nC @ 4.5V | ±20V | 6560pF @ 13V | Schottky Diode (Body) | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 14V 11A 8-SOIC |
4,842 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 14V | 11A (Ta) | 2.5V, 4.5V | 12mOhm @ 11A, 4.5V | 600mV @ 250µA | 125nC @ 5V | ±12V | 8075pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 6.7A 8-SOIC |
6,606 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.8A (Ta) | 4.5V, 10V | 45mOhm @ 2.8A, 10V | 1V @ 250µA | 59nC @ 10V | ±20V | 1100pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
7,974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11mOhm @ 7.3A, 10V | 3V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
4,752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 25µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8-SOIC |
5,022 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 4030pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 1.7A MICRO8 |
2,340 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.7A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | ±12V | 240pF @ 15V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-uSMD | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
6,966 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V | 12mOhm @ 15A, 4.5V | 1V @ 250µA | 33nC @ 5V | ±12V | 2335pF @ 16V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13.6A 8-SOIC |
4,410 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.6A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 1V @ 250µA | 14nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8-SOIC |
8,514 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | ±20V | 2910pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN |
5,886 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | ±20V | 4175pF @ 30V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 17A 5X6 PQFN |
7,848 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 17A (Ta), 100A (Tc) | 10V | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | ±20V | 4290pF @ 25V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 13A 5X6 PQFN |
3,006 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | ±20V | 4340pF @ 25V | - | 3.6W (Ta), 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 5X6 PQFN |
2,556 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 3090pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 5X6 PQFN |
3,582 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 63A (Tc) | 10V | 12.4mOhm @ 37A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 3152pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 16A 5X6 PQFN |
6,498 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 89A (Tc) | 10V | 6.7mOhm @ 50A, 10V | 4V @ 100µA | 60nC @ 10V | ±20V | 2490pF @ 25V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 75V 5X6 PQFN |
3,420 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 13A (Ta), 71A (Tc) | 10V | 9.6mOhm @ 43A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2474pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 10A 5X6 PQFN |
6,228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 55A (Tc) | 10V | 14.9mOhm @ 33A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2570pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 40A 5X6 PQFN |
7,992 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 40A (Tc) | 10V | 14.4mOhm @ 24A, 10V | 4V @ 50µA | 35nC @ 10V | ±20V | 1256pF @ 25V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |