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IRF6711STR1PBF

IRF6711STR1PBF

For Reference Only

Part Number IRF6711STR1PBF
PNEDA Part # IRF6711STR1PBF
Description MOSFET N-CH 25V 19A DIRECTFET-SQ
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF6711STR1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF6711STR1PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRF6711STR1PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs20nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1810pF @ 13V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDIRECTFET™ SQ
Package / CaseDirectFET™ Isometric SQ

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