Infineon Technologies Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
Records 6,749
Page 192/225
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Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET N-CH 75V 120A TO-220AB |
5,220 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-220AB |
8,118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
5,598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Ta) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 200V 18A TO262 |
6,804 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 105mOhm @ 11A, 10V | 4.9V @ 100µA | 29nC @ 10V | ±20V | 1200pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 195A TO262 |
5,184 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 195A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 33A TO-262 |
2,592 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 40nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
4,788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162nC @ 4.5V | ±20V | 10315pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 24V 195A D2PAK |
3,402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 38A DIRECTFET |
8,226 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.25mOhm @ 38A, 10V | 2.35V @ 150µA | 69nC @ 4.5V | ±20V | 6750pF @ 13V | - | 2.8W (Ta), 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 31A DIRECTFET |
8,190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 63nC @ 4.5V | ±20V | 6030pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN |
8,316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 42A (Tc) | 4.5V, 10V | 7.1mOhm @ 16A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | ±20V | 1510pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A PQFN33 |
2,286 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 29A (Tc) | 4.5V, 10V | 12.4mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | ±20V | 755pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 9.3A PQFN56 |
6,570 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.3A (Ta), 46A (Tc) | 10V | 18mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | 1510pF @ 50V | - | 3.1W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56 |
6,894 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1160pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56 |
6,354 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 34A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 24A PQFN56 |
6,696 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 104A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.35V @ 100µA | 51nC @ 4.5V | ±20V | 4270pF @ 15V | - | 3.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN56 |
7,632 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 54A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | ±20V | 2360pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
5,958 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO220AB |
4,194 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB |
8,892 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 4.1A DFET SB |
5,058 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.1A (Ta), 14.4A (Tc) | 10V | 62mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | ±20V | 515pF @ 25V | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET SB | DirectFET™ Isometric SB |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
8,856 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | ±20V | 760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
7,650 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1020pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
6,444 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 61A DIRECTFET L6 |
5,364 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 61A (Ta), 270A (Tc) | 4.5V, 10V | 0.7mOhm @ 61A, 10V | 2.35V @ 150µA | 96nC @ 4.5V | ±20V | 6500pF @ 13V | - | 4.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Infineon Technologies |
MOSFET N-CH 30V 35A 5X6 PQFN |
5,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.85mOhm @ 50A, 10V | 2.35V @ 100µA | 77nC @ 10V | ±20V | 5114pF @ 15V | - | 3.6W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 32A 5X6 PQFN |
4,554 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 50A, 10V | 2.35V @ 100µA | 76nC @ 10V | ±20V | 4400pF @ 15V | - | 3.6W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A 5X6 PQFN |
8,478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 44A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1125pF @ 15V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 40V 375A DIRECTFET |
5,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 375A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 11880pF @ 25V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 60V 375A DIRECTFET |
3,150 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 33A (Ta), 375A (Tc) | 10V | 1.5mOhm @ 120A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 12320pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |