Infineon Technologies Transistors - FETs, MOSFETs - Arrays
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Arrays
ManufacturerInfineon Technologies
Records 393
Page 4/14
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET 2N-CH 50V 3A 8SOIC |
8,280 |
|
Automotive, AEC-Q101, HEXFET® | 2 N-Channel (Dual) | Standard | 50V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | 255pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 40V 20A TDSON-8 |
5,256 |
|
OptiMOS™ | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
4,986 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
8,082 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
|
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Infineon Technologies |
MOSFET 2N-CH 30V 6.5A 8SOIC |
5,958 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29mOhm @ 6.9A, 10V | 3V @ 250µA | 33nC @ 10V | 755pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2P-CH 55V 3.4A 8SOIC |
5,130 |
|
Automotive, AEC-Q101, HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | 690pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 55V 5.1A 8SOIC |
6,840 |
|
Automotive, AEC-Q101, HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | 2.4W | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2 N-CH 1200V 100A MODULE |
8,316 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 100A | 11mOhm @ 100A, 15V | 5.55V @ 40mA | 250nC @ 15V | 7950pF @ 800V | - | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
|
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Infineon Technologies |
MOSFET 2N-CH 100V 11A TO-220FP-5 |
8,496 |
|
- | 2 N-Channel (Dual) | Standard | 100V | 11A | 72.5mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | 18W | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 Full Pack | TO-220-5 Full-Pak |
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Infineon Technologies |
MOSFET 2 N-CH 1200V 50A MODULE |
4,356 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
|
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Infineon Technologies |
MOSFET MODULE 1200V 50A |
7,632 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 |
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Infineon Technologies |
MOSFET MODULE 1200V 50A |
7,830 |
|
CoolSiC™+ | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY1BM-2 |
|
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Infineon Technologies |
MOSFET MODULE 1200V 150A |
7,560 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V | 150A (Tj) | 7.5mOhm @ 150A, 15V (Typ) | 5.55V @ 60mA | 372nC @ 15V | 11000pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY2BM-2 |
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Infineon Technologies |
MOSFET MODULE 1200V 200A |
8,226 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 10mA | 496nC @ 15V | 14700pF @ 800V | 20mW (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | Module | AG-EASY2BM-2 |
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Infineon Technologies |
MOSFET MODULE 1200V 50A |
3,978 |
|
CoolSiC™+ | 2 N-Channel (Dual) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.5V @ 20mA | 125nC @ 5V | 3950pF @ 800V | 20mW | -40°C ~ 150°C (TJ) | Chassis Mount | Module | Module |
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Infineon Technologies |
MOSFET 2N-CH 20V 7A 8-SOIC |
7,092 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 7A | 30mOhm @ 7A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 1340pF @ 16V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 20V 5.2A 8-SOIC |
7,200 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5.2A | 50mOhm @ 2.6A, 4.5V | 700mV @ 250µA | 20nC @ 4.5V | 660pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 60V 2.6A 8SOIC |
4,986 |
|
SIPMOS® | 2 N-Channel (Dual) | Logic Level Gate | 60V | 2.6A | 150mOhm @ 2.6A, 4.5V | 2V @ 20µA | 20nC @ 10V | 380pF @ 25V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | PG-DSO-8 |
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Infineon Technologies |
MOSFET 2N-CH 20V 6.6A 8-SOIC |
5,436 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.6A | 29mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET N/P-CH 20V 8TDSON |
2,304 |
|
Automotive, AEC-Q101, HEXFET® | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | 2.5W | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL |
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Infineon Technologies |
MOSFET 2N-CH 12V 10A 8SOIC |
4,698 |
|
HEXFET® | 2 N-Channel (Dual) | Logic Level Gate | 12V | 10A | 15mOhm @ 8A, 4.5V | 2V @ 250µA | 26nC @ 4.5V | 1730pF @ 6V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 100V 3.2A 8TDSON |
5,688 |
|
OptiMOS™ | 2 N-Channel (Dual) | Standard | 100V | 3.2A | 75mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | 720pF @ 50V | 26W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PG-TDSON-8-4 |
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Infineon Technologies |
MOSFET 2N-CH 25V 19A/41A 8TISON |
3,006 |
|
OptiMOS™ | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 25V | 19A, 41A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | 1100pF @ 12V | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TISON-8 |
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Infineon Technologies |
MOSFET N/P-CH 30V 1.4A/1.5A TSOP |
2,844 |
|
Automotive, AEC-Q101, OptiMOS™ | N and P-Channel Complementary | Logic Level Gate, 4.5V Drive | 30V | 1.4A, 1.5A | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | 282pF @ 15V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2P-CH 20V 5.3A 8-SOIC |
3,996 |
|
HEXFET® | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5.3A | 58mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | 780pF @ 15V | 2W | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Infineon Technologies |
MOSFET 2N-CH 8TDSON |
3,852 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerVDFN | PG-TDSON-8-10 |
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Infineon Technologies |
SMALL SIGNAL+P-CH |
5,418 |
|
* | - | - | - | - | - | - | - | - | - | - | Surface Mount | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 1.5A 6TSOP |
5,670 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 2.5V Drive | 20V | 1.5A | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8nC @ 5V | 143pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2 N-CH 20V 2.3A TSOP6-6 |
2,970 |
|
OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 20V | 2.3A (Ta) | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | 259pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |
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Infineon Technologies |
MOSFET 2N-CH 20V 2.5A 6TSOP |
8,190 |
|
Automotive, AEC-Q101, OptiMOS™ | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 20V | 2.5A | 50mOhm @ 2.5A, 4.5V | 1.2V @ 11µA | 3.2nC @ 4.5V | 419pF @ 10V | 500mW | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | PG-TSOP-6-6 |