Infineon Technologies Transistors - Bipolar (BJT) - RF

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Voltage - Collector Emitter Breakdown (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - RF

ManufacturerInfineon Technologies

Records 181

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Image	Part Number	Manufacturer	Description	In Stock	Quantity	Series	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	BFS17WH6393XTSA1	Infineon Technologies	RF TRANS NPN SOT323-3	3,510		*	-	-	-	-	-	-	-	-	-	-	-	-

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