Vishay Semiconductor Diodes Division Transistors - Bipolar (BJT) - Single
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CategorySemiconductors / Transistors / Transistors - Bipolar (BJT) - Single
ManufacturerVishay Semiconductor Diodes Division
Records 2
Page 1/1
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | DC Current Gain (hFE) (Min) @ Ic, Vce | Power - Max | Frequency - Transition | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
TRANS NPN 40V 0.2A TO-92 |
3,978 |
|
- | NPN | 200mA | 40V | 300mV @ 5mA, 50mA | - | 100 @ 10mA, 1V | 625mW | 300MHz | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92 |
|
|
Vishay Semiconductor Diodes Division |
TRANS NPN 300V 0.5A TO-92 |
3,564 |
|
- | NPN | 500mA | 300V | 500mV @ 2mA, 20mA | 100nA (ICBO) | 40 @ 30mA, 10V | 625mW | 50MHz | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |