Vishay Semiconductor Diodes Division Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerVishay Semiconductor Diodes Division
Records 11,281
Page 329/377
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
6,966 |
|
eSMP® | Avalanche | 400V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.6A TO277A |
7,398 |
|
eSMP® | Avalanche | 400V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
4,140 |
|
eSMP® | Avalanche | 600V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.6A TO277A |
8,154 |
|
eSMP® | Avalanche | 600V | 1.6A (DC) | 1.9V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
5,886 |
|
eSMP® | Avalanche | 800V | 1.3A (DC) | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.3A TO277A |
6,192 |
|
eSMP® | Avalanche | 800V | 1.3A (DC) | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.3A TO277 |
7,398 |
|
eSMP® | Avalanche | 1000V | 1.3A (DC) | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.3A TO277 |
4,032 |
|
eSMP® | Avalanche | 1000V | 1.3A (DC) | 2.5V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 29pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
2,160 |
|
eSMP® | Avalanche | 200V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
7,110 |
|
eSMP® | Avalanche | 200V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
6,912 |
|
eSMP® | Avalanche | 400V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
2,376 |
|
eSMP® | Avalanche | 400V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
2,844 |
|
eSMP® | Avalanche | 600V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
5,112 |
|
eSMP® | Avalanche | 600V | 1.7A (DC) | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
3,598 |
|
eSMP® | Avalanche | 800V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
6,426 |
|
eSMP® | Avalanche | 800V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.4A TO277 |
7,578 |
|
eSMP® | Avalanche | 1000V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.4A TO277 |
3,366 |
|
eSMP® | Avalanche | 1000V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A SMA |
7,452 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A SMB |
7,182 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 9A DO204AR |
3,762 |
|
- | Schottky | 15V | 9A | 310mV @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | - | 7mA @ 15V | 1300pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 100°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A DO204AL |
8,946 |
|
- | Schottky | 100V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 35pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A SMB |
2,916 |
|
- | Schottky | 100V | 1A | 780mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A SMB |
3,276 |
|
- | Schottky | 30V | 1A | 420mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A SMB |
7,128 |
|
- | Schottky | 30V | 1A | 420mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 125°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A SMC |
4,248 |
|
- | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A SMC |
4,734 |
|
- | Schottky | 60V | 3A | 740mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO204AL |
5,526 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
5,724 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | 25pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
8,226 |
|
SUPERECTIFIER® | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |