Vishay Semiconductor Diodes Division Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerVishay Semiconductor Diodes Division
Records 11,281
Page 179/377
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A SOD64 |
6,714 |
|
- | Standard | 400V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A |
4,680 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 10A (DC) | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5.5A TO277A |
7,632 |
|
eSMP®, TMBS® | Schottky | 50V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5.5A TO277A |
3,562 |
|
eSMP®, TMBS® | Schottky | 50V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 12A TO277A |
5,580 |
|
Automotive, AEC-Q101 | Schottky | 20V | 12A | 560mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1000µA @ 20V | 930pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 12A TO277A |
5,652 |
|
Automotive, AEC-Q101 | Schottky | 30V | 12A | 560mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1000µA @ 20V | 930pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
5,706 |
|
- | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO220AC |
7,938 |
|
TMBS® | Schottky | 45V | 10A (DC) | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 200°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 3A SOD64 |
8,568 |
|
- | Standard | 500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 500V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 3A SOD64 |
8,496 |
|
- | Standard | 500V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 500V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V ITO-220AB |
8,154 |
|
TMBS® | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-220AB |
8,442 |
|
- | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO277A |
4,428 |
|
eSMP®, TMBS® | Schottky | 60V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO277A |
5,454 |
|
eSMP®, TMBS® | Schottky | 60V | 5.5A | 630mV @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 4A SOD64 |
6,120 |
|
- | Avalanche | 200V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
3,780 |
|
- | Avalanche | 800V | 3A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 800V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A SOD64 |
2,988 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A SOD64 |
2,700 |
|
- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A SOD64 |
8,406 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A SOD64 |
8,244 |
|
- | Standard | 800V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 100V TO-263AB |
3,186 |
|
- | Schottky | 100V | 20A | 1.07V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.8A TO277A |
2,286 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.8A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.8A TO277A |
5,940 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.8A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A |
6,966 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.8A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.8A TO277A |
6,336 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.8A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.8A TO277A |
8,028 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.8A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.8A TO277A |
5,580 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.8A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.6A TO277A |
4,716 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.6A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.6A TO277A |
6,102 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.6A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.6A TO277A |
8,298 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.6A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 34pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |