Vishay Semiconductor Diodes Division Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerVishay Semiconductor Diodes Division
Records 11,281
Page 106/377
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 500MA DO204 |
5,814 |
|
- | Standard | 1400V | 500mA | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO-219AB |
4,860 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 30V | 1A | 480mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 130pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO-219AB |
3,474 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 115pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 1A DO-219AB |
8,892 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 100V | 70pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMA |
3,418 |
|
FRED Pt® | Standard | 100V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15.2ns | 2µA @ 100V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A SMA |
7,398 |
|
FRED Pt® | Standard | 200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15.2ns | 2µA @ 200V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A SMA |
7,830 |
|
FRED Pt® | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A SMA |
2,520 |
|
FRED Pt® | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 200V | - | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
2,268 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
3,384 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
7,092 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
3,582 |
|
SUPERECTIFIER® | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
3,598 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
5,922 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
5,778 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
8,136 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
3,420 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
7,146 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
3,402 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO213AB |
4,140 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB |
4,662 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
8,244 |
|
SUPERECTIFIER® | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
7,722 |
|
SUPERECTIFIER® | Standard | 800V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.3KV 1A DO213AB |
7,218 |
|
SUPERECTIFIER® | Standard | 1300V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1300V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
4,860 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | - | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
5,040 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
5,364 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
7,272 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2.4A DO214AC |
6,318 |
|
TMBS® | Schottky | 60V | 2.4A | 630mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900µA @ 60V | 245pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO220AA |
4,572 |
|
eSMP® | Schottky | 30V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 130pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |