Toshiba Semiconductor and Storage Transistors - FETs, MOSFETs - Arrays
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Show Filters
Reset Filters
Apply Filters
CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Arrays
ManufacturerToshiba Semiconductor and Storage
Records 87
Page 1/3
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.3A |
666,396 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 300mA | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 285mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 60V 0.17A US6 |
266,466 |
|
- | 2 N-Channel (Dual) | Standard | 60V | 170mA | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | 285mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A 2-2J1C |
115,080 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 300mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 0.1A ES6 |
349,350 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.5A/0.33A ES6 |
30,378 |
|
- | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.5A US6 |
22,488 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 500mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 200mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.8A |
106,050 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 800mA | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N/P-CH 30V 0.4A/0.2A US6 |
46,710 |
|
- | N and P-Channel | Logic Level Gate | 30V | 400mA, 200mA | 700mOhm @ 200MA, 10V | 1.8V @ 100µA | - | 20pF @ 5V | 300mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 4A UDFN6 |
178,158 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 30V 4A UDFN6 |
25,812 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 4A | 46mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | 310pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-µDFN (2x2) |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2 N-CHANNEL 20V 250MA US6 |
213,492 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 250mA (Ta) | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 300mW | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.18A ES6 |
34,080 |
|
- | 2 N-Channel (Dual) | Logic Level Gate | 20V | 180mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
35,046 |
|
- | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 4A 2-1Y1A |
24,612 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
|
|
Toshiba Semiconductor and Storage |
MOSFET N/P-CH 20V 4A UDFN6 |
26,922 |
|
- | N and P-Channel | Standard | 20V | 4A | - | - | - | - | - | - | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 4A 2-2Y1A |
22,698 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | 1W | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFN (2x2) |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
73,368 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
28,596 |
|
- | 2 N-Channel (Dual) | Standard | 30V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
48,372 |
|
- | 2 P-Channel (Dual) | Silicon Carbide (SiC) | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2 N-CHANNEL 20V 250MA ES6 |
30,672 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 250mW | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
81,318 |
|
U-MOSVII | 2 P-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2N-CH 20V 0.1A US6 |
22,386 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 200mW | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
X34 SMALL LOW RON DUAL NCH MOSFE |
29,406 |
|
- | 2 N-Channel (Dual) | Standard | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | 7pF @ 3V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2P-CH 30V 0.1A ES6 |
68,556 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE |
82,050 |
|
- | N and P-Channel | Logic Level Gate, 1.5V Drive | 20V | 800mA (Ta), 720mA (Ta) | 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V | 1V @ 1mA | 2nC, 1.76nC @ 4.5V | 90pF, 110pF @ 10V | 150mW (Ta) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2 N-CHANNEL 20V 250MA US6 |
26,064 |
|
- | 2 N-Channel (Dual) | Standard | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 285mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
25,890 |
|
U-MOSVII | 2 P-Channel (Dual) | Logic Level Gate, 1.2V Drive | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | 285mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | US6 |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH X 2 VDS |
57,666 |
|
- | 2 N-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 500mA (Ta) | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
|
|
Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH X 2 VDS |
55,446 |
|
- | 2 P-Channel (Dual) | Logic Level Gate, 1.5V Drive | 20V | 330mA (Ta) | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | 500mW (Ta) | 150°C | Surface Mount | 6-SMD, Flat Leads | UF6 |
|
|
Toshiba Semiconductor and Storage |
MOSFET 2P-CH 20V 0.72A ES6 |
34,788 |
|
- | 2 P-Channel (Dual) | Logic Level Gate | 20V | 720mA | 300mOhm @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | 110pF @ 10V | 150mW | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) |