Vishay's new ultra-thin BiAs single-wire ESD protection diode

     Vishay has introduced a new bi-directional and symmetrical (BiAs) single-wire ESD protection diode, VESD15A1-HD1-G4-08. The diode has a reverse avalanche breakdown voltage of more than 15.5V and a low forward voltage in an ultra-small LLP1006-2L package.

     With a small footprint of 1.0mm x 0.6mm and a thickness of less than 0.4mm, the Vishay Semiconductors VESD15A1-HD1-G4-08 reduces the board space required for ESD protection in products such as smartphones, tablets, game consoles and MP3 players. For these devices, the diode has a leakage current of less than 0.01μA and a load capacitance of 45pF at 0V, providing excellent ground-to-ground isolation.

     Any transient voltage signal that exceeds the 15.5V reverse breakdown voltage will be clamped and short-circuited to ground. A negative transient voltage signal driving the diode in the positive direction will also be clamped below the ground level. The maximum reverse and forward clamping voltages of the device at 1A current are 20V and 1.3V, respectively.

     VESD15A1-HD1-G4-08 provides transient protection for a data line with a protection level of 3kV(air and contact discharge) per IEC 61000 42, and can protect against high surge currents over 6A, in accordance with IEC 61000-4-5 requirements. The device has a moisture sensitivity rating (MSL) of Class 1 of J-STD-020 and a flame retardant rating of UL 94 V-0. The pin pin is plated with nickel palladium to prevent the growth of tin whiskers. Protection diodes comply with RoHS and Vishay green standards and are halogen-free. The welding can be checked with standard visual inspection without X-ray inspection.