Vishay introduces the new TrenchFET 20V n-channel MOSFET

     Vishay introduces the new TrenchFET 20V n-channel MOSFET- Si8410DB - to save space, reduce power consumption and extend battery life in wearables, smartphones, tablets and solid-state drives. The Vishay Siliconix Si8410DB is in a chip scale MICRO FOOT package with a height of only 0.54mm and has the lowest on-resistance among 20V devices with a small 1mm2 footprint.

     The Si8410DB is suitable for use as a load switch, small signal switch and high speed switch in power management applications with extremely low on-resistance of 37mΩ, 41mΩ, 47mΩ and 68mΩ at 4.5V, 2.5V, 1.8V and 1.5V, respectively. This device has 26%, 32%, 35%, and 27% lower on-resistance at 4.5V, 2.5V, 1.8V, and 1.5V compared to the closest competitor in the CSP 1mm2 package. The Si8410DB had 32%, 40%, 48% and 43% lower on-resistance at 4.5V, 2.5V, 1.8V and 1.5V compared to the DFN 1mm2 package. The device's low on-resistance, on-current down to 1.5V, plus ±8V VGS, enables lithium-ion powered applications with safety margins, flexible gate drive design, and high performance.

     With an extremely low on-resistance of 30mΩ/mm2, the Si8410DB is 20% lower than the nearest 20V MOSFETs packaged in 1mm2 plastic, saving space and reducing battery power consumption in mobile applications. The device's low on-resistance means that the voltage drop at DC and pulse peak currents is very low, wasting less power in the form of heat. The lower on-resistance and lower thermal resistance make the Si8410DB's temperature rise 45% and 144% lower than the next best chip in CSP and 1mm2 packages.