Vishay introduces the industry-leading 600 V E-series power MOSFETs in a small, top-side cooled PowerPAK package

     Vishay Intertechnology, Inc. announced the introduction of the first fourth-generation 600 V E-series power MOSFET-SIHR080N60E in a new PowerPAK 8 x 8LR package, providing efficient, high-power density solutions for communications, industrial and computing applications. Compared to the previous generation of devices, the Vishay Siliconix n-channel SiHR080N60E on-resistance is reduced by 27%, the on-resistance and gate charge product, that is, the important value factor (FOM) of 600 V MOSFET in power conversion applications is reduced by 60%, and the rated current is higher than that of D2PAK packaged devices. At the same time reduce the occupying area.

     Vishay's extensive MOSFET technology fully supports the power conversion process, covering a wide range of advanced high-tech equipment requiring high voltage input to low voltage output. With the introduction of the SiHR080N60E and the release of other fourth-generation 600 V E-series devices, Vishay meets the requirements for improved energy efficiency and power density early in the design of the power system architecture - including power factor correction (PFC) and the DC/DC converter brick power supply. Typical applications include servers, edge computing, supercomputers, data storage, UPS, high intensity discharge (HID) lights and fluorescent ballasters, communication SMPS, solar inverters, welding equipment, induction heating, motor drives, and battery chargers.

     The SiHR080N60E comes in a compact PowerPAK 8 x 8LR package with an external dimension of 10.42mm x 8mm x 1.65mm, a 50.8% reduction in floor area and a 66% reduction in height compared to the D2PAK package. Due to the top-side cooling of the package, it has excellent thermal performance, with crust (drain) thermal resistance of only 0.25 C/W. The rated current is 46% higher than the D2PAK package at the same on-resistance, resulting in significantly higher power density. In addition, the packaged gull-wing lead structure has excellent temperature cycling performance.

     The SiHR080N60E uses Vishay's advanced energy efficient E-Series super junction technology, with a typical on-resistance of only 0.074Ω at 10 V and an ultra-low gate charge down to 42 nC. With an industry-leading FOM of 3.1Ω *nC, these performance parameters mean reduced conduction and switching losses, resulting in energy savings and improved efficiency for power systems over 2 kW. The recently released MOSFET effective output capacitances Co(er) and Co(tr) typical values are only 79 pF and 499 pF, respectively, helping to improve switching performance in hard switching topologies such as PFC, half-bridge, and two-switch forward designs. The package also offers a Kelvin connection to improve switching efficiency.