Vishay introduces the fourth generation 600V E-series power MOSFETs

     Vishay Intertechnology, Inc. has introduced its fourth generation 600V E-series power MOSFETs in a new PowerPAK 8 x 8LR package that delivers increased efficiency and power density for telecommunications, industrial and computing applications. The equipment is rohs compliant and halogen-free. It is designed to withstand overvoltage transients in avalanche mode and is guaranteed to 100% US testing limits.

     Compared to the previous generation of devices, the Vishay Siliconix n-channel SiHR080N60E reduces the on-resistance by 27% and the resistance of the gate charge (the key FOM for 600V MOSFETs for power conversion applications) by 60%, while delivering higher current in a smaller footprint.

     The company offers a comprehensive range of MOSFET technologies that support all stages of the power conversion process, from the high-voltage input to the low-voltage output needed to power the latest high-tech equipment. With this product and other devices in the fourth-generation 600V E Series family, the company addresses the need for efficiency and power density improvements in the two first stages of power system architecture - the PFC and subsequent DC-DC converter modules. Typical applications will include servers, edge computing, supercomputers, and data storage; UPS; HID lamps and fluorescent lamp ballasts; Telecommunications smp; Solar inverter; Welding equipment; Induction heating; Motor drive; And a battery charger.

     Measuring 10.42mm x 8mm x 1.65mm, the compact PowerPAK 8 x 8LR package is 50.8% smaller than the D²PAK's footprint and 66% lower. Due to its top cooling, the package has excellent thermal performance, with an extremely low crusting thermal resistance (heat leakage) of 0.25C/W. This allows for a 46% higher current than a D²PAK at the same on-resistance level, allowing for significantly higher power density. In addition, the package's gull-shaped lead provides excellent temperature cycling capability.

     The device is based on the company's latest energy efficient E-Series overjunction technology and features a low typical on-resistance of 0.074 ohms at 10V and an ultra-low gate charge down to 42nC. The resulting FOM is the lowest in the industry at 3.1 ohms *nC, which means reduced conduction and switching losses in power systems with >2kW, resulting in energy savings and increased efficiency. To improve switching performance in hard switching topologies such as PFC, half-bridge, and two-switch forward designs, MOSFETs provide typical effective output capacitors Co(er) and Co(tr) of 79pF and 499pF, respectively. The package also offers Kelvin connections to improve switching efficiency.