Vishay Siliconix introduces n-channel power MOSFETs

     Vishay Intertechnology has announced the introduction of a new 8V n-channel TrenchFET power MOSFET, the SiA436DJ. The device is available in a 2 x 2mm occupancy area thermally enhanced PowerPAK SC-70 package with the lowest on-resistance of any n-channel device.

     The new SiA436DJ features ultra-low on-resistance of 9.4mΩ, 10.5mΩ, 12.5mΩ, 18mΩ and 36mΩ at 4.5V, 2.5V, 1.8V, 1.5V and 1.2V. The on-resistance value is up to 18% lower than the previous generation solution and up to 64% lower than the closest n-channel device with 2mm x 2mm occupancy area.

     The SiA436DJ can be used for load switching in portable electronics such as smartphones, tablets, and mobile computing applications. The device's ultra-small PowerPAK SC-70 package saves PCB space in these applications, while its low on-resistance reduces conduction losses, reducing power consumption and increasing efficiency.

     Mosfets can be switched on at a voltage of 1.2V, allowing MOSFETs to work with the low-voltage power rails common in handheld devices, simplifying circuit design and making the battery work longer between charge cycles. The SiA436DJ's low on-resistance also reduces the voltage drop on the load switch, preventing the undesirable undervoltage lock phenomenon.