The first MOSFET designed with an ultra-short channel FET II

     Magnachip Semiconductor Corporation has released its 8th generation MXT low-voltage MOSFETs for smartphone battery protection circuits. For the first time, the company introduced its proprietary ultra-short channel FET II (SSCFET II) technology in the new 12V double N-channel MOSFET (MDWC12D024PERH). SSCFET II is its latest design technology, which greatly reduces the channel length and thus the RSS(on).

     The product's RSS(on) is approximately 22% lower than its predecessor of the same size. This reduction reduces power consumption, reduces smartphone charging time, and reduces the internal temperature of the smartphone by about 12% in fast charging mode.

     As global smartphone manufacturers improve the artificial intelligence capabilities of smartphones, the importance of MOSFET products is increasing. The company's new 12V MXT low-voltage MOSFETs have high power efficiency and are optimized for a wide range of battery protection applications in high-end smartphones, especially AI smartphones on the device.

     "Following the development of the ultra-short channel FEET I technology and the successful launch of the product early last year, Magnachip is now introducing an upgraded version of the ultra-short channel FEET II technology," said YJ Kim, CEO of Magnachip. In the second half of this year, we plan to continue to develop innovative high-density cellular slot technology and launch advanced power solutions for smartphones, smartwatches, and headsets."