The extended MOSFETs portfolio provides increased design flexibility

     Nexperia announced that the continued expansion of its NextPower 80V and 100V MOSFET portfolio is continuing with the release of several new LFPAK devices in the industry standard 5mm x 6mm and 8mm x 8mm sizes. Optimized for low RDS(on) and low Qrr, these new NextPower 80/100V MOSFETs provide high efficiency and low spikes in applications such as servers, power supplies, fast chargers, and USB-PD, as well as a wide range of telecommunications, motor control, and other industrial equipment. Designers can choose between 80V and 100V devices with RDS(on) ranging from 1.8mOhm to 15mOhm.

     Many MOSFET manufacturers focus on achieving high efficiency through low QG(tot) and low QGD when benchmarking the switching performance of their devices. However, through extensive research, the company has determined that Qrr is just as important because of its effect on spikes and, in turn, the amount of EMI produced during device switching. By focusing on this parameter, the company has significantly reduced the level of spikes produced by its NextPower 80/100V MOSFETs, and therefore the amount of EMI they produce. This can benefit end users by reducing the possibility of costly later redesigns to include additional external components if the application fails EMC testing.

     These new MOSFETs have a 31 percent reduction in on-resistance (RDSon) compared to currently available devices. The company also plans to further strengthen its NextPower 80/100V portfolio later this year with the release of additional LFPAK88 MOSFETs, offering RDS(on) as low as 1.2 mOhm@80V, and the introduction of the power-intensive CCPAK1212 into the portfolio. To further support the design and certification of these devices, the company offers award-winning interactive data sheets that provide engineers with comprehensive and user-friendly insights into device behavior.