The Infineon 800 V CoolMOS P7 Series sets a new benchmark in efficiency and thermal performance

     Infineon Technologies AG introduces the 800 V CoolMOS™ P7 series. The 800 V MOSFET is based on super junction technology and offers exceptional performance and ease of use. This new family of products is ideal for low-power SMPS applications and fully meets market demands for performance, ease of design and cost performance. It focuses primarily on flyback topologies, which are common in applications such as adapters, LED lighting, audio, industrial and auxiliary power supplies.

     The 800 V CoolMOS P7 series increases efficiency by up to 0.6%. Compared to CoolMOS C3, or other competitors tested in typical flyback applications, this equates to a 2 to 8 °C reduction in MOSFET temperature. The new benchmark results from a series of optimized device parameters, including reductions of Eoss and Qg by more than 50 percent, as well as reductions in Ciss and Coss. These excellent performance optimizations reduce switching losses and improve the lowest RDS(on) values that DPAK packages can achieve, enabling higher power density designs. All in all, this helps customers save material costs and reduce assembly effort.

     Ease of use is inherent in the design of this family of products. Its integrated Zener diode significantly improves electrostatic protection, thereby reducing output losses associated with electrostatic discharge. This MOSFET has an industry-leading V(GS)th of up to 3 V and a minimum VGS(th) fluctuation range of only ±0.5 V. This combination not only reduces drive voltage and switching losses, but it also helps to avoid accidental operations in the linear region.