STMicroelectronics introduces new power MOSFETs for smaller, greener automotive power supplies

     STMicroelectronics has introduced a new series of high-voltage n-channel power MOSFETs for the automotive market. The new product is AEC-Q101 automotive test certified, uses ST's most advanced MDmeshTM DM2 superjunction manufacturing process with built-in fast recovery diode, breakdown voltage range from 400V TO 650V, and is available in D2PAK, TO-220 and TO-247 packages.

     The new 400V and 500V products are the first power MOSFETs in their class on the market to achieve AEC-Q101 certification, while the 600V and 650V products outperform existing competitors. Designed for automotive applications, the full range integrates fast body diodes, commutation behavior with higher recovery softness, and back-to-back gate-source zener diode protection. Ideal for full-bridge zero-voltage switching topology.

     STMicroelectronics' new power MOSFETs are the best-performing power MOSFETs in the automotive market for Trr(Reverse recovery time)/Qrr(Reverse recovery charge) ratio and recovery softness factor, while also offering the best high current turn-off energy (Eoff) to help improve automotive power efficiency. In addition, the performance of the internal fast body diode is excellent, helping to reduce EMI interference and allowing designers to use smaller passive filter pieces. In this way, MDmeshTM DM2 technology enables power supply designs to be more environmentally friendly and consume less energy, thereby maximizing energy efficiency and minimizing the size of the end product.