Renesas introduces low loss silicon carbide power devices

     Renesas Electronics has announced the development of the Schottky Barrier Diode (SBD) RJS6005TDPP, which uses silicon carbide material - a material considered to have great potential for use in power semiconductor devices. The new SiC Schottky barrier diode is suitable for high-power electronic systems such as air conditioners, communication base stations and solar arrays. The device also uses technology jointly developed by Hitachi and Renesas to help achieve low power consumption. This reduces power consumption by approximately 40% compared to Renesas' existing power devices using traditional silicon (Si).

     Recently, in order to promote environmental protection, many customers have an increasing demand for high-efficiency power circuits. Products that use power conversion or inverter circuits, such as air conditioners, communications base stations, PC servers and solar arrays, have a particularly strong demand for more efficient power conversion. Therefore, the diodes used in these power conversion circuits need to provide faster conversion speeds and can operate at low voltages. Renesas developed the new SiC SBD to meet these needs.

     The new SiC-SBD has a voltage rating (forward step-down, VF) of only 1.5 volts (V), which is lower than the voltage rating of existing silicon fast trigger diode products. In addition, the SiC-SBD is less temperature-dependent, ensuring a stable forward voltage - even at high temperatures. This means that a more compact cooling design can be used to reduce costs and reduce product volume.

     The new RJS6005TDPP SiC-SBD application is equivalent TO the industry-standard TO-220 package and is pin-compatible. This means that the RJS6005TDPP SiC SBD can be easily used to replace traditional silicon diodes on existing printed circuit boards.

     Renesas has A strong lineup of new power devices with currents ranging from 3A to 30 A and peak voltage ratings of 600 V. These power devices are designed to meet the high performance requirements of high-power electronic systems such as air conditioners, communication base stations and solar arrays, and plans to launch a product family with peak voltage ratings of 1200 V. Renesas strives to provide customers with total solutions that combine MCU and analog and power devices, and is committed to becoming a leading power device supplier. Renesas plans to enhance suite solutions and composite semiconductor devices with a new high-voltage SiC-SBD power device at its core, complemented by peripheral power control ics, high-performance IGBTs, high-voltage overjunction MOSFETs and optocouplers.