Nexperia now offering SiC MOSFETs in D2PAK-7 SMD package

     Nexperia has recently introduced their highly advanced 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging. These MOSFETs are available in four different options with RDSon values of 30, 40, 60, and 80 mΩ. Nexperia recently released two separate SiC MOSFETs in 3 and 4-pin TO-247 packaging in late 2023. This announcement is part of a series of releases that will quickly expand Nexperia’s SiC MOSFET portfolio to include devices with RDSon values of 17, 30, 40, 60, and 80 mΩ in various package options.

     Nexperia is meeting the increasing market demand for high-performance SiC switches in SMD packages like D2PAK-7 with the release of the NSF0xx120D7A0. These switches are being widely adopted in various industrial applications, including electric vehicle charging, uninterruptible power supplies, and solar and energy storage system inverters. Furthermore, this serves as additional evidence of Nexperia’s prosperous strategic collaboration with Mitsubishi Electric Corporation (MELCO), where the two companies have united to enhance the energy efficiency and electrical performance of SiC wide bandgap semiconductors. Additionally, this partnership ensures that production capacity for this technology is prepared for future market demands.

     RDSon is a crucial performance characteristic for SiC MOSFETs as it directly affects the power losses during conduction. Nevertheless, most manufacturers prioritize the nominal value while disregarding the possibility of it increasing by over 100% due to elevated device operating temperatures, leading to significant conduction losses. Nexperia recognized this as a constraining element in the efficiency of numerous SiC devices currently on the market. To address this, Nexperia utilized its advanced process technology to guarantee that its new SiC MOSFETs provide exceptional temperature stability. These MOSFETs exhibit a nominal increase of only 38% in RDSon over a temperature range of 25 °C to 175 °C, positioning them as leaders in the industry.

     The MOSFETs have a very precise threshold voltage, known as VGS(th), which enables them to provide balanced current-carrying capability when coupled in parallel. In addition, a low body diode forward voltage (VSD) is a characteristic that enhances the durability and effectiveness of the device, while also reducing the need for a long dead-time during freewheeling operation.