Nexperia introduces the 1200V SiC MOSFETs in the industry-leading top-cooling X.PIC package

     Nexperia has launched a series of highly efficient, stable and reliable industrial-grade 1200 V silicon carbide (SiC) MOSFETs. This family of devices performs well in terms of temperature stability and uses the innovative Surface Mount (SMD) top-cooling package technology X.PIC. The compact X.AK package, measuring only 14 mm ×18.5 mm, cleverly combines the convenient advantages of SMD technology in the packaging process and the efficient heat dissipation capability of through-hole technology to ensure excellent heat dissipation effect.

     The new product launch addresses the growing demand for discrete SiC MOSFETs in a wide range of high-power (industrial) applications, where superior thermal performance is achieved through the benefits of top-cooling technology. These devices excel in industrial applications such as battery energy storage systems (BESS), photovoltaic inverters, motor drivers, and uninterruptible power supplies (UPS). In addition, it can also play an outstanding role in the field of electric vehicle charging infrastructure, including charging piles.

     The X.PAC package allows the heat sink to be connected directly to the lead frame, further enhancing the heat dissipation performance of the Nexperia SiC MOSFET and enabling efficient heat dissipation from the top of the housing. This design effectively reduces the negative impact of heat dissipation through the PCB. At the same time, Nexperia's X.PAK package enables low inductance for surface mount components and enables automated board packaging processes.

     The new X.PAK package has the same outstanding factor of quality (FoM) as Nexperia SiC MOSFETs. Among them, RDS(on), as a key parameter, has a significant effect on the on-off loss. However, many manufacturers tend to focus only on the nominal value of this parameter (room temperature), ignoring the fact that as the operating temperature of the device increases, the nominal value can increase by more than 100%, resulting in considerable on-off losses. In contrast, Nexperia SiC MOSFETs show excellent temperature stability, with nominal RDS(on) increases of only 38% over the operating temperature range of 25 ° C to 175 ° C.

     Katrin Feurle, Senior Director and Head of Nexperia SiC discrete Devices and Modules, said: "Our introduction of SiC MOSFETs in X.PAC packaging marks an important breakthrough in heat management and power density for high power applications. Building on our previous successful TO-247 and SMD D2PAK-7 packaged discrete SiC MOSFETs, we developed this new top-cooling solution. This demonstrates Nexperia's strong commitment to providing customers with an advanced, flexible product portfolio to meet their evolving design needs."

     The initial product portfolio includes models with RDS(on) values of 30, 40, and 60 mΩ (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), with a 17 Mω product planned for April 2025. 2025 will also be followed by the introduction of automotive standard X.PAC packaged SiC MOSFET product line, as well as more RDson grade products such as 80 mΩ.