Nexperia introduces GaN FETs in compact SMD encapsulated CCPAK for industrial and renewable energy applications

     Nexperia, a specialist in high-capacity production of basic semiconductor devices, announced the launch of a new GaN FET device featuring a new generation of high-voltage GaN HEMT technology and a proprietary copper clamp CCPAK surface-mount package, providing designers with more options for industrial and renewable energy applications. After more than two decades of hard work, Nexperia has developed extensive expertise in providing large-scale, high-quality copper-clip-on SMD packages, and is proud to have successfully applied this breakthrough package solution, CCPAK, to cascading gallium nitride field-effect transistors (GaN FETs).

     The GAN039-650NTB is a 33 mΩ (typical value) gallium nitride field effect tube using CCPAK1212i top cooling package technology, opening up a new era of combination of wide band gap semiconductor and copper clip package. This technology brings many benefits to renewable energy applications such as solar and home heat pumps, further strengthening Nexperia's commitment to developing leading-edge device technologies for sustainable applications. The technology is also suitable for a wide range of industrial applications such as servo drives, switched mode power supplies (SMPS), servers and telecommunications applications.

     Nexperia's innovative CCPAK package uses Nexperia's proven copper clip package technology, eliminating the need for internal wire welding, which reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For maximum design flexibility, the CCPAK GaN FETs are available in top or bottom heat dissipation configurations to further improve heat dissipation performance.

     The cascade configuration of the GAN039-650NTB enables it to provide excellent switching and on-off performance, in addition to its robust and reliable gate structure which provides a high noise tolerance. This feature also facilitates simplified application design, eliminating the need for complex gate drivers and control circuits and allowing these devices to be easily driven using standard silicon MOSFET drivers. Nexperia's GaN technology improves switching stability and helps reduce the size of the bare piece by approximately 24%. In addition, the RDS(on) of the device is only 33 mΩ at 25 ° C (typical value), while it has a high gate threshold voltage and a low equivalent bulk diode on-voltage drop.

     Carlos Castro, Nexperia vice president and general manager of GaN FET Business Unit, said: "Nexperia deeply recognizes that designers of industrial and renewable energy equipment need a highly robust switching solution to achieve excellent thermal efficiency when performing power conversion. So Nexperia decided to combine the superior switching performance of its cascade GaN FETs with the superior thermal performance of its CCPAK package to provide an outstanding solution for our customers."