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NXP introduces new automotive-grade TrenchMOS devices

Jun 3 2012 2012-06 Semiconductors NXP
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NXP Semiconductors announced a new family of auto-grade power MOSFET devices featuring NXP's Trench 6 technology with extremely low on-resistance (RDSon), extremely high switching performance, and outstanding quality and reliability. NXP's new automotive grade MOSFETs are AEC-Q101 certified and have successfully passed extended life testing at 175˚C temperatures for more than 1,600 hours (performance far exceeding Q101 requirements) while achieving extremely low PPM levels.

     NXP Semiconductors announced a new family of auto-grade power MOSFET devices featuring NXP's Trench 6 technology with extremely low on-resistance (RDSon), extremely high switching performance, and outstanding quality and reliability. NXP's new automotive grade MOSFETs are AEC-Q101 certified and have successfully passed extended life testing at 175˚C temperatures for more than 1,600 hours (performance far exceeding Q101 requirements) while achieving extremely low PPM levels.

     The first products in NXP's new family of automotive MOSFETs will be available in D2PAK packages in voltage levels of 30V, 40V, 60V, 80V and 100V, all with outstanding on-resistance (RDSon) performance. Future Trench 6 devices will be available in other types of automotive packages, including NXP's highly reliable, high-performance Power-SO8 LFPAK56 package, as an important extension of the portfolio to provide customers with full application flexibility. The series covers almost all automotive applications, from simple headlight lighting to sophisticated transmission, body and chassis power control systems.

     The Trench 6 will further improve the switching performance of the previous generation of TrenchMOS devices to achieve ultra-low QGD at a given on-resistance (RDSon), making it ideal for automotive DC-DC switching applications. NXP's automotive-grade power MOSFET devices also bring true logic level variation to a wide range of products, an important feature that combines reference on-resistance performance with threshold voltage tolerances to ensure proper control of MOSFET devices at high temperatures.

     Ian Kennedy, Product Market Manager, NXP Semiconductors, said, "Our Trench 6 Automotive power MOSFET provides an optimized, reliable, high-performance solution for virtually every MOSFET socket in the vehicle. Extensive and rigorous testing has shown that the Trench 6 has a very simple architecture and a proven track record in the standard MOSFET market over the past two years, providing the quality and reliability required to extend vehicle life."

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