Littelfuse introduces an expanded line of silicon carbide Schottky diodes

     Littelfuse announced the introduction of four new 1200V silicon carbide (SiC) Schottky diode families that are part of its Generation 2 product family, which was originally released in May 2017. The LSIC2SD120A08 series, LSIC2SD120A15 series and LSIC2SD120A20 series are rated at 8A, 15A, 20A respectively, and come in the mainstream TO220-2L package. In addition, the LSIC2SD120C08 series is rated at 8A and is available in a TO-252-2L package.

     Generation 2 Schottky diode combined p-n Schottky (MPS) device architecture ensures improved surge resistance and reduced leakage current. Replacing standard silicon bipolar power diodes with new generation 2 silicon carbide Schottky diodes allows circuit designers to significantly reduce switching losses, withstand strong inrush currents without thermal escape, and operate at junction temperatures up to 175°C. This helps to greatly improve the efficiency and durability of power electronics systems.

     "The latest offerings of second-generation silicon carbide Schottky diodes enable circuit designers to reduce switching losses, withstand strong inrush currents without heat escape, and operate at higher junction temperatures." Said Michael Ketterer, global product marketing manager for Littelfuse power Semiconductors. "They provide more component options for circuit designers seeking to improve the efficiency, reliability and thermal management of the latest power electronics systems."