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Infineon launches the most efficient 650V IGBT family for high-speed switch applications in electric and hybrid vehicles

Feb 3 2015 2015-02 Connectors Infineon Technologies
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Infineon Technologies AG has announced the highly rugged 650V IGBT series that enables the highest efficiency of high-speed switches used in automobiles. The series TRENCHSTOP5 AUTO IGBT is AEC-Q compliant and reduces power loss and improves reliability for electric vehicle (EV) and hybrid vehicle (HEV) applications such as on-board charging, power factor correction (PFC), DC/DC and DC/AC conversion.

     Infineon Technologies has announced the highly rugged 650V IGBT series that enables the highest efficiency of high-speed switches used in automobiles. The series TRENCHSTOP™5 AUTO IGBT is AEC-Q compliant and reduces power loss and improves reliability for electric vehicle (EV) and hybrid vehicle (HEV) applications such as on-board charging, power factor correction (PFC), DC/DC and DC/AC conversion.

     The new IGBT series has a 50V higher blocking voltage than the previous automotive IGBT series and, thanks to Infineon TRENCHSTOP™ 5 thin wafer technology, achieves best-in-class efficiency. Compared to existing cutting-edge technology, the new IGBT has a 200mV reduction in saturation voltage (VCE(sat)), a halving of switching losses, and a 2.5 times reduction in gate charge. At the same time, due to the reduction of both switching and on-off losses, the new IGBT series offers lower junction temperatures and enclosure temperatures for the same application compared to alternative technologies. This not only improves device reliability, but also minimizes cooling requirements.

     By using the TRENCHSTOP™ 5 AUTO IGBT, electric vehicle designers can realize the added benefit of increased device efficiency, namely the ability to extend range or reduce battery size. For hybrid vehicles, increased efficiency means lower total fuel consumption and reduced CO2 emissions. In addition, the superior performance of TRENCHSTOP™ 5 AUTO IGBT devices enables them to enter applications that are currently dominated by MOSFET technology and provides designers with a wide choice based on different semiconductor chip technologies.

     The TRENCHSTOP™ 5 AUTO IGBT family of devices is rated at 40A or 50A and is available as a single discrete IGBT and an IGBT that can be co-packaged with Infineon's ultra-fast "Rapid" silicon diode. For either of these products, Infineon offers both the H5 HighSpeed and F5 HighSpeed FAST series, depending on whether optimizing switching speed and achieving maximum efficiency are the primary design criteria.

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