Infineon introduces the CoolSiC™ Schottky Diode 2000 V in the TO-247-2 package
Many industrial applications are now moving towards higher power levels with minimal power losses, and one way to achieve this is to increase the DC bus voltage. In response to this market trend, Infineon Technologies AG, the global semiconductor leader in power systems and the Internet of Things, launched the CoolSiC™ Schottky Diode 2000 V G5 product family in September 2024, the first silicon carbide diode discrete device with a breakdown voltage of 2000 V. The product family is currently extended TO the TO-247-2 package, and its pins are compatible with most existing TO-247-2 packages. The product family is ideal for applications with a maximum DC bus voltage of 1500 VDC, making it ideal for solar and electric vehicle charging stations.
The 2000 V CoolSiC™ Schottky Diode G5 in the TO-247-2 package is rated from 10 A TO 80 A. Compared to 1200 V solutions, this product enables developers to achieve higher power levels in their applications while halving the number of devices, simplifying the overall design and facilitating a seamless transition from multilevel to two-level topologies.
In addition, the TO-247-2 package Schottky diode is also used. XT interconnection technology greatly reduces thermal impedance and improves thermal management capability. It also verified its stability in wet environments through HV-H3TRB reliability tests. This diode has no reverse recovery and forward recovery, and has the characteristics of forward low voltage, thus ensuring the improvement of system performance.
The 2000 V diode series is a perfect match for Infineon's TO-247 PlUS-4 HCC package CoolSiC™ MOSFET 2000 V, which will be launched in Spring 2024. In addition TO the TO-247-2 package, the CoolSiC™ Schottky Diode 2000 V is also available in the TO-247 Plus-4 HCC package.
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