Infineon begins mass production of the first all-silicon carbide module

Higher efficiency, greater power density, smaller size and lower system cost: these are the main advantages of silicon carbon-based (SiC) transistors. Infineon Technologies begins mass production of EASY 1B, Infineon's first all-silicon carbide module introduced at PCIM 2016. At PCIM 2017 in Nuremberg, Infineon showcased additional module platforms and topologies for the 1200 V CoolSiC™ MOSFET product family. Today, Infineon is in a better position to leverage the potential of silicon carbide technology.

Dr. Peter Wawer, President of Infineon's Industrial Power Control Division, said: "Silicon carbide has reached a turning point where it can be used for different applications, taking into account cost effectiveness. However, in order for this new semiconductor technology to become a revolutionary technology that can be relied upon, a partner like Infineon is needed. Tailored products for applications, our production capabilities, comprehensive knowledge of our technology portfolio and systems: these four strengths make us the market leader in power semiconductors. With Infineon's silicon carbide portfolio, we hope and can achieve this goal."

The new 1200 V silicon carbide MOSFETs are optimized for high reliability and performance. The dynamic power loss is an order of magnitude lower than that of 1200V silicon (Si) IGBTs. The first batch of products will focus on applications such as photovoltaic inverters, uninterruptible power supplies (UPS) and charging/storage systems. The introduction of new models in the near future will also create the conditions for revolutionary solutions for industrial frequency converters, medical devices or auxiliary power supplies for railway equipment.

One of the benefits of the grooved gate technology used in the 1200 V SiC MOSEFT is its durability. This is due to its low working time failure (FIT) rate and effective short-circuit capability, which can be adapted to different applications. Thanks to a threshold voltage (Vth) of 4 V and a recommended on-threshold (VGS) of +15 V, these transistors can be controlled like IGBTs and shut down safely in the event of failure. The silicon carbide MOSFET enables high-speed switching, and Infineon's silicon Carbide MOSFET technology allows switching speeds to be changed by adjusting the gate resistance, making it easy to optimize EMC performance.

As early as last year, Infineon launched the lead product EASY 1B(Half bridge /Booster) and discrete devices TO-247-3pin and TO-247-4pin products. The EASY 1B platform is mature and is the ideal modular platform for fast switching devices. At this year's PCIM, Infineon will showcase additional module platforms and topologies based on 1200 V SiC MOSFET technology. They will progressively expand the performance range of CoolSiC MOSFETs. The silicon carbide modules on display at Infineon include:

● EASY 1B with B6(Six-Pack) topology: This module features a mature Infineon module configuration with an on-resistance (RDS(ON) of only 45 mΩ. The integrated body diode ensures low loss continuous flow function. The EASY 1B is suitable for applications in the field of transmission, solar energy or welding technology.

● EASY 2B with half-bridge topology: This larger EASY device has enhanced performance with an RDS(ON) of 8 mΩ per switch. The low-inductance module concept is ideal for power over 50 kW and fast-switching applications, such as solar inverters, fast-charging systems or uninterruptible power solutions.

● 62 mm in half-bridge topology: Additional half-bridge configuration with higher power, RDS(ON) of 6 mΩ per switch function. The module platform creates the conditions for low inductance connection of medium power range systems. This feature is suitable for many applications, including auxiliary power supplies for medical devices or railway equipment. Due to the large number of potential applications, Infineon expects the module to gain rapid adoption.