Infineon Technologies introduces the new CoolMOS C7 series superjunction (SJ) MOSFETs family

     Infineon Technologies introduces the new CoolMOS™ C7 series superjunction (SJ) MOSFET family. The 600 V series reduces switching losses by 50% compared to CoolMOS™ CP and achieves similar performance levels to GaN in PFC, TTF and other hard switching topologies. The CoolMOS C7 is the first in the industry to achieve an area specific resistance (RDS(ON)*A) of 1 Ω/mm2, which further expands Infineon's minimum RDS(ON) portfolio, enabling customers to further increase power density. The new CoolMOS series features ultra-low switching losses for high-power switching power supply (SMPS) applications - such as servers, telecommunications, solar, and industrial applications that require improved efficiency, lower component cost (BoM) and total cost of ownership (TCO).

     CoolMOS C7 reduces switching losses in applications that require increased efficiency and reduced TCO, such as very large data centers and telecom base stations. CoolMOS C7 improves the efficiency of PFC and LLC topologies by 0.3-0.7% and 0.1%, respectively, which contributes to a significant reduction in total cost of ownership. For a 2.5kW server PSU, using a C7 600V MOSFETs can reduce energy costs due to PSU energy loss by around 10%.

     In applications where components and other costs are a concern, such as enterprise servers, the CoolMOS C7 600 V device can help reduce magnetic component costs. Due to the significantly reduced gate charge and output capacitance, the C7 switches at twice the frequency of CoolMOS™ CP, but is only slightly less efficient. This helps to minimize the size of the magnetic components and reduce the total cost of the components. For example, when the switching frequency is doubled from 65 kHz to 130 kHz, the cost of magnetic components can be reduced by as much as 30%.

     The CoolMOS C7 600 V family of products will be manufactured in two 300mm fabs, providing customers with guaranteed supply. The family includes a wide range of models with varying RDS(ON) values and packages, including the first model in the highly innovative TO-247 4-pin package. This 4-pin package eliminates supply inductance voltage drops due to fast transients, increasing full-load efficiency by up to 0.4%.

     Peter Wawer, Vice President and General Manager of AC/DC product Line at Infineon, said: "As part of Infineon's high-voltage MOSFET portfolio, the new CoolMOS C7 600V family is an important 'cornerstone' for the GaN devices Infineon expects to launch in early 2016. With off-the-shelf, reliable technology already in series production, CoolMOS C7 devices can achieve switching frequencies up to 200 kHz with minimal switching losses, and Infineon's GaN technology will further expand the frequency range to support new topologies."

     Infineon's new 2EDN7524 EiceDRIVER™ IC, complementary to the CoolMOS C7 600 V and equipped with industry standard pins, has two independent, non-isolated low-side gate drivers, each capable of supporting 5 A peak source and pool current. Both channels can achieve typical 5 ns rise and fall times, while the 1 ns inter-channel delay matching allows for easy setup of synchronous switching, doubling the total drive current. Although the current is increased, the RDS(ON) of the output stage is very low, which minimizes the power consumption of the driver - even with very small gate resistors or without any external gate resistors. Because the driver IC is compatible to control and enable voltages up to -10 VDC at the input, it can effectively cope with ground bounces and improve system reliability.