High power density single tube IGBT in TO-247PLUS package

     Infineon Technologies AG has further expanded its 1200 V single tube IGBT portfolio with A new product range of up to 75 A. The TO-247 Plus package also incorporates a full constant current anti-parallel diode. The new TO-247 Plus 3-pin and 4-pin packages meet the growing demand for higher power density and greater efficiency. Typical applications that require a high power density of 1200VIGBT include frequency converters, photovoltaic inverters and uninterruptible power supplies (UPS). Other applications include battery charging and energy storage systems.

     Compared TO the conventional TO-247-3 package, the new TO-247PLUS package can achieve double the rated current. Due TO the removal of the mounting holes in the standard TO-247 package, the PLUS package has a larger lead frame area, so it can accommodate a larger IGBT chip. The 75A 1200V IGBT with the same pin size is now available. The larger lead frame allows for lower thermal resistance in the TO-247PLUS package, resulting in increased heat dissipation.

     For designers who want TO reduce switching losses, the TO-247 Plus 4-pin package features an additional Kelvin emitter pin that reduces the inductance of the gate-emitter control loop and reduces the total switching loss E(ts) by more than 20%. The 1200V IGBT in TO-247PLUS 3-pin and 4-pin packages increases the system power density. In addition, they can reduce the number of parallel power devices, increase system efficiency or improve system heat dissipation.