Expanded anti-radiation memory portfolio

     Space-based applications are an important area for Infineon Technologies AG, where the company's products are used in satellites, Mars rover instruments and space telescopes, all of which require the highest reliability even under the harshest conditions. Today, the company announced the industry's first radiation-resistant (rad hard) 1mb and 2mb parallel interface ferroelectric ram (F-RAM) non-volatile storage devices. These add to its extensive memory portfolio of unmatched reliability and durability, with up to 120 years of data retention at 85 ° C, as well as random access and full memory write bus speeds.

     F-RAM devices are inherently hard, and the technology is well suited to the evolving mission requirements of space applications that have been using slower, less robust EEPROM non-volatile storage devices. Features compared to other alternatives include faster random access to memory, better data security, instant non-volatile write technology and low power consumption with extremely low programming voltage down to 2V and a maximum operating current of 20mA.

     Helmut Puchner, Vice President, Aerospace & Defense, Infineon, said: "As more and more space applications are designed to process data on the system rather than on the ground via telemetry, there is an increasing need for highly reliable non-volatile memory to work with space-grade processors and FPgas for data-logging applications. " Infineon introduced the first SPI F-RAM device for this market in 2022, and the addition of the parallel interface device reflects our commitment to providing best-in-class, highly reliable and flexible solutions for the next generation of space requirements."

     Targeted applications for these new hard F-RAM devices include data storage for sensors and instruments, data logging for calibration data, secure key storage for data encryption, and startup code storage. In addition to outer space, they are also suitable for avionics and other applications that require defense standard temperature ratings (-55 ° C to 125 ° C).

     Like the SPI version, the chemical composition of the new parallel interface F-RAM device has excellent non-volatile storage properties, including instantaneous switching of atomic states, rather than capturing charge to program bits as in EEPROM technology. F-RAM is inherently immune to soft errors and magnetic or radiation effects. No software is required to manage page boundaries, and the near-infinite durability (10-13 write cycles) means that loss equalization is not required.