Cree introduces the first 900V MOSFET platform capable of breaking the industry's SiC power device technology

     SiC market leader Cree recently introduced the first 900V MOSFET platform capable of breaking the industry's SiC power device technology. This upgraded platform, based on Cree's SiC plane technology, expands the product portfolio to meet the design challenges of the market update and can be used for higher DC bus voltages. And ahead of 900V superjunction SI-based MOSFET technology, expand the power range of the terminal system, can still provide low on-resistance Rds(on) at higher temperatures, greatly reduce the size of the thermal management system, and well solve the problem of heat dissipation and significant derating.

     Compared to current SI-based solutions, the 900V SiC MOSFET platform offers power conversion designers more room for innovation, enabling smaller, faster, cooler, and more efficient power supply designs. It is also a solution for a new generation of power conversion systems with silicon cost parity.

     C3M0065090J is the leading product of the platform, and its rated operating voltage/current is 900V/32A. At 25°C, a minimum on-resistance rating of 65 mΩ can be achieved, and at higher temperatures (Tj=150°C), the on-resistance Rds(ON) is only 90 Mω, reducing the cooling requirements of the system. In addition to the industry-standard TO247-3/TO220-3 package, the product is also available in a low-impedance D2Pak-7L surface mount package with Kelvin connections to help reduce gate oscillations. The C3M0065090J is suitable for high frequency power electronics applications including renewable energy inverters, electric vehicle charging systems, three-phase industrial power supplies, high voltage DC/DC converters, and off mode power supplies.