A new 80V symmetrical dual N-channel power MOSFET

     Vishay Intertechnology, Inc. has released a new 80V symmetrical dual N-channel power MOSFET. The high-side and low-side TrenchFET Gen IV MOSFETs are integrated in a 3.3mm x 3.3mm PowerPAIR 3x3 FS package. For power conversion in industrial and telecommunications applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency while improving thermal performance, reducing component count and simplifying design.

     Dual MOSFETs can replace the two discrete devices specified in the PowerPAK 1212 package, saving 50% board space. The device provides designers with a space-saving solution for synchronous buck converters, POL converters, and half-bridge and full-bridge power stages for DC-DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high-side and low-side MOSFETs of the device form an optimized combination of 50% duty cycle, while their logic level is on at 4.5V to simplify the circuit drive.

     To increase power density, the on-resistance of the MOSFET can be as low as 18.5mOhm at 4.5V. This is 16% less than the closest competing device of the same package size. The device provides low on-resistance multiplied by total gate charge to improve efficiency in high frequency switching applications, a key benefit of MOSFETs for 131mOhm*nC power conversion applications.

     The device's flip chip technology improves heat dissipation, resulting in a 54% lower thermal resistance than competing MOSFETs. The device combines low on-resistance and thermal resistance, resulting in a continuous drain current of 36A, which is 38 percent higher than the nearest competing device. Mosfets offer a unique pin configuration that allows for simplified PCB layout and supports a shortened switching loop to minimize parasitic inductance. The equipment is 100% Rg and US tested, rohs compliant and halogen-free.