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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 74/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
HS3DB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
6,660
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3FB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AA
3,024
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3GB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
2,592
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3JB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
5,310
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
UG2JA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
3,330
-
Standard
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
2µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2AHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
7,074
Automotive, AEC-Q101
Standard
50V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2BHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
4,878
Automotive, AEC-Q101
Standard
100V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2CHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
6,228
Automotive, AEC-Q101
Standard
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2DHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
2,214
Automotive, AEC-Q101
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2FHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
4,284
Automotive, AEC-Q101
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2GHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
7,776
Automotive, AEC-Q101
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
1N5820 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO201AD
7,992
-
Schottky
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
FR301G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3,400
-
Standard
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR302G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3,528
-
Standard
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR303G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
8,334
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR304G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
2,268
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
ES2F R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
6,174
-
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ESH2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
6,462
-
Standard
100V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2C R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
7,722
-
Standard
150V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
RS3A V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
6,156
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS2J R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AA
5,526
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
6,354
-
Standard
100V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2D R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
6,570
-
Standard
200V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2F R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
5,958
-
Standard
300V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2G R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
8,172
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3A V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
3,564
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8,280
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3C V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
5,562
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
3,490
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3DV V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4,392
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C