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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 65/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
ES1JLHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
7,974
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HER207G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
7,452
-
Standard
800V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER208G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 2A DO204AC
2,160
-
Standard
-
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
1N5400GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
4,950
Automotive, AEC-Q101
Standard
50V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5401GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
5,688
Automotive, AEC-Q101
Standard
100V
3A
1.1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 100V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5402GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
5,184
Automotive, AEC-Q101
Standard
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 200V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
1N5404GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
2,934
Automotive, AEC-Q101
Standard
400V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
25pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK22A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 2A DO214AC
6,660
-
Schottky
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK23A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A DO214AC
8,496
-
Schottky
30V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SK25A R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 2A DO214AC
4,536
-
Schottky
50V
2A
700mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SF2L8GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
7,830
Automotive, AEC-Q101
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
1µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
ES2AA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AC
5,688
-
Standard
50V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2BA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AC
2,214
-
Standard
100V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2CA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AC
7,902
-
Standard
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2DA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AC
6,210
-
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2FA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AC
6,354
-
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2GA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AC
2,790
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS34L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
2,970
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS36L RQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
2,934
-
Schottky
60V
3A
750mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES2AAHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AC
8,190
Automotive, AEC-Q101
Standard
50V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SRT110 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 1A TS-1
6,552
-
Schottky
100V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
ES2JAHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
5,508
Automotive, AEC-Q101
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SFT17GHA1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A TS-1
7,866
Automotive, AEC-Q101
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
10pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
SFT18GHA1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A TS-1
7,488
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
10pF @ 4V, 1MHz
Through Hole
T-18, Axial
TS-1
-55°C ~ 150°C
TSSA3U60 M2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A DO214AC
4,896
-
Schottky
60V
3A
540mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
500µA @ 60V
610pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
MUR160 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
5,436
-
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
MUR160HR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
6,984
Automotive, AEC-Q101
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
MUR105S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AA
2,502
-
Standard
50V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
MUR110S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AA
7,992
-
Standard
100V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
MUR115S R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AA
3,454
-
Standard
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
50µA @ 150V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C