Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 59/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MUR190A A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 900V 1A DO204AL	4,590	-	Standard	900V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 900V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
SRT115 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	5,796	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SK210A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AC	3,492	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK29A M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AC	7,272	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LD R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8,082	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LG R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	2,268	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1LJ R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	4,122	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2K R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	2,124	-	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ESH1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	7,128	-	Standard	100V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
ESH1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	4,032	-	Standard	200V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	1µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RS2BAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	2,484	-	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2DAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	4,482	-	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SFT17G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	8,334	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	6,408	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS210L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SUB SMA	7,902	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	4,500	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SFT15GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	8,370	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16GHA1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	5,022	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT15GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	6,264	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	6,174	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	7,362	Automotive, AEC-Q101	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	5,616	Automotive, AEC-Q101	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SRT115 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A TS-1	3,996	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT15G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	5,238	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT15G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	4,752	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT16G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	2,574	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HS2AA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	7,650	-	Standard	50V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2BA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	5,148	-	Standard	100V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2DA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	5,166	-	Standard	200V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2FA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1.5A DO214AC	8,802	-	Standard	300V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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