Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

ManufacturerTaiwan Semiconductor Corporation

Records 5,388

Page 30/180

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S1JHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	3,924	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
BAV19WS RRG	Taiwan Semiconductor Corporation	DIODE GEN PURP 120V 200MA SOD323	5,310	-	Standard	120V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	-65°C ~ 150°C
S1AL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	5,292	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ALHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	3,816	Automotive, AEC-Q101	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	4,968	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2,934	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	5,040	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	6,876	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5,130	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	2,556	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	8,028	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	8,568	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
BA159GHR1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	7,074	Automotive, AEC-Q101	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS19W RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 200MA SOT323	5,976	-	Standard	100V	200mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 100V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
BAS20W RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 200MA SOT323	2,862	-	Standard	150V	200mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
1N4936GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	3,258	Automotive, AEC-Q101	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA159GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	5,796	Automotive, AEC-Q101	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5392G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	4,014	-	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5393G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	2,970	-	Standard	200V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N5397G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	7,056	-	Standard	600V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
2A02G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	2,700	-	Standard	100V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
BA159GHB0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	3,996	Automotive, AEC-Q101	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAS21W RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 250V 200MA SOT323	5,004	-	Standard	250V	200mA	1.25V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 250V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
BAT43W RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOD123	8,334	-	Schottky	30V	200mA (DC)	650mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
2A04G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	3,546	-	Standard	400V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S1K M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	2,790	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1KHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	7,866	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AC	8,226	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1MHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AC	4,212	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
TSS0340U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 30MA 0603	6,984	-	Schottky	45V	30mA	370mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 40V	1.5pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-40°C ~ 125°C

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