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Taiwan Semiconductor Corporation Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
ManufacturerTaiwan Semiconductor Corporation
Records 5,388
Page 179/180
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
UF4007 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
6,462
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4007HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
6,462
Automotive, AEC-Q101
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UG2D B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
3,672
-
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
UG2DHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
2,592
Automotive, AEC-Q101
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
UG54G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO201AD
3,490
-
Standard
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG54GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 5A DO201AD
3,870
Automotive, AEC-Q101
Standard
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG56G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO201AD
6,048
-
Standard
400V
5A
1.55V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG56GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 5A DO201AD
5,328
Automotive, AEC-Q101
Standard
400V
5A
1.55V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 400V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
UG58G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO201AD
3,204
-
Standard
600V
5A
2.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
30µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
UG58GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A DO201AD
5,382
Automotive, AEC-Q101
Standard
600V
5A
2.1V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
30µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
ARS5045 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 45V 50A ARS
2,988
-
Standard
45V
50A
550mV @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500µA @ 45V
2700pF @ 4V, 1MHz
Surface Mount
ARS
ARS
-55°C ~ 175°C
ARS5045HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 45V 50A ARS
7,488
Automotive, AEC-Q101
Standard
45V
50A
550mV @ 50A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500µA @ 45V
2700pF @ 4V, 1MHz
Surface Mount
ARS
ARS
-55°C ~ 175°C
BAT42 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
3,744
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT42 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
3,598
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT42 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
3,042
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT42-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
3,600
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT42-L0 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
6,174
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT42-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
6,318
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT42-L0 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
2,016
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
6,570
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
6,156
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
7,128
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43-L0 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
5,742
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43-L0 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
3,472
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43-L0 R0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
3,510
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAT43-L0 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35
3,400
-
Schottky
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 125°C
BAS85 L0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
4,410
-
Schottky
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
Mini MELF
125°C (Max)
BAS85 L1
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
2,124
-
Schottky
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
Mini MELF
125°C (Max)
BAS85-L0 L0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
3,762
-
Schottky
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
Mini MELF
125°C (Max)
BAS85-L0 L0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY MINIMELF
4,194
-
Schottky
30V
200mA
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
DO-213AC, MINI-MELF, SOD-80
Mini MELF
125°C (Max)