Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 842/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8-SO |
7,920 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V, 20V | 13.3mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | ±25V | 1110pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 21A 8-PQFN |
3,078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 5.6mOhm @ 50A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 3090pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 75V 13A 8-PQFN |
4,050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 13A (Ta), 71A (Tc) | 10V | 9.6mOhm @ 43A, 10V | 4V @ 100µA | 59nC @ 10V | ±20V | 2474pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 82A 8-PQFN |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 82A (Tc) | 4.5V, 10V | 4.2mOhm @ 49A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2190pF @ 15V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 150A TO263CA-7 |
4,266 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230nC @ 10V | ±20V | 5360pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-263CA-7 | TO-263-7 (Straight Leads) |
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Infineon Technologies |
MOSFET N-CH 40V DIRECTFET-ST |
8,964 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2560pF @ 20V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 40V DIRECTFET-ST |
5,058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 12.7A (Ta), 55A (Tc) | 4.5V, 10V | 8.3mOhm @ 12.7A, 10V | 2.25V @ 250µA | 29nC @ 4.5V | ±20V | 2560pF @ 20V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET-MU |
4,410 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 69A (Tc) | 4.5V, 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1410pF @ 10V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MU | DirectFET™ Isometric MU |
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Infineon Technologies |
MOSFET N-CH 20V 16A DIRECTFET-MP |
7,884 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta), 59A (Tc) | 4.5V, 10V | 5.6mOhm @ 16A, 10V | 2.2V @ 250µA | 17nC @ 4.5V | ±20V | 1250pF @ 10V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-MN |
4,050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-MN |
5,184 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-SJ |
6,444 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 890pF @ 25V | - | 3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SJ | DirectFET™ Isometric SJ |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-SH |
5,076 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7nC @ 10V | ±20V | 530pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SH | DirectFET™ Isometric SH |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-SH |
2,952 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | ±20V | 530pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SH | DirectFET™ Isometric SH |
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Infineon Technologies |
MOSFET N-CH 100V DIRECTFET-SH |
8,460 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | ±20V | 530pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SH | DirectFET™ Isometric SH |
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Infineon Technologies |
MOSFET N-CH 80V 55A DIRECTFET-MZ |
7,074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 55A (Tc) | 10V | 15mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1320pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH 25V 12A DIRECTFET-S1 |
3,562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 12A (Ta), 39A (Tc) | 4.5V, 10V | 7.8mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1010pF @ 13V | - | 1.8W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V 22A DIRECTFET-SQ |
6,156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 95A (Tc) | 4.5V, 10V | 3mOhm @ 22A, 10V | 2.4V @ 50µA | 32nC @ 4.5V | ±20V | 2880pF @ 13V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 11A DIRECTFET-S1 |
5,490 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 35A (Tc) | 4.5V, 10V | 8mOhm @ 11A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1140pF @ 15V | - | 1.7W (Ta), 17W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 25V 37A DIRECTFET-MX |
4,050 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 197A (Tc) | 4.5V, 10V | 1.3mOhm @ 37A, 10V | 2.35V @ 150µA | 75nC @ 4.5V | ±20V | 6560pF @ 13V | Schottky Diode (Body) | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 12V 16A 8-SO |
4,554 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 16A (Ta) | 1.8V, 4.5V | 7mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | ±8V | 8676pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 17.2A 8-SO |
6,858 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36nC @ 4.5V | ±20V | 2910pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 25V 25A 8-SO |
6,696 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 25A (Ta) | 4.5V, 10V | 2.7mOhm @ 25A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | ±20V | 5305pF @ 13V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 24A 8-SO |
2,502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 2.35V @ 100µA | 66nC @ 4.5V | ±20V | 5720pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 60V 79A DPAK |
3,816 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 31A DPAK |
6,192 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 1690pF @ 25V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
6,012 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215nC @ 10V | ±20V | 9575pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK |
8,784 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | ±20V | 2150pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 58A D-PAK |
8,262 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | ±20V | 1350pF @ 15V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 270A D2PAK |
5,040 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |