Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 652/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 100V 10.5A DPAK |
8,784 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.5A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK |
5,940 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK |
8,118 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 41.8nC @ 10V | ±20V | 1550pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DPAK |
6,498 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 2V @ 23µA | 19nC @ 10V | ±20V | 700pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 60V 30A DPAK |
4,554 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48nC @ 10V | ±20V | 1535pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A DPAK |
5,148 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 2530pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
4,320 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET |
2,286 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 55A (Tc) | 4.5V, 10V | 9mOhm @ 13A, 10V | 3V @ 250µA | 24nC @ 4.5V | ±12V | 2120pF @ 15V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
6,768 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
8,226 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
8,298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
5,886 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-262 |
4,842 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 75A D2PAK |
2,772 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
2,952 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
6,372 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
7,002 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 93A DPAK |
3,186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2160pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
7,452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 42A I-PAK |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 18mOhm @ 33A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2930pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK |
5,526 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 49A DPAK |
7,938 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 49A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | ±20V | 810pF @ 10V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 55V 75A TO-220AB |
2,898 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 55V 75A TO-220AB |
3,006 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK |
6,966 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK |
2,502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 75A D2PAK |
6,048 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 75A D2PAK |
2,322 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 55V 75A D2PAK |
3,870 |
|
- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 55V 75A D2PAK |
2,214 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |