Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 519/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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IXYS |
MOSFET N-CH 1000V 8A TO-251 |
6,354 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 8A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
5,166 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 24V 195A TO220AB |
5,598 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.5mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 160A TO262 |
8,280 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | ±20V | 7960pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO263 |
3,474 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO-220 |
2,376 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 5.4mOhm @ 100A, 10V | 4V @ 250µA | 181nC @ 10V | ±20V | 12000pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 25V 37A SO8FL |
2,088 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 37A (Ta), 193A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.1V @ 250µA | 40.9nC @ 10V | ±20V | 2652pF @ 12V | - | 3.13W (Ta), 83W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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IXYS |
MOSFET N-CH 800V 2A TO-220 |
3,492 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 2A (Tc) | 10V | 6.2Ohm @ 500mA, 10V | 5.5V @ 250µA | 22nC @ 10V | ±20V | 440pF @ 25V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7 |
8,748 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
5,922 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 200V 36A TO-220 |
8,910 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A TO-220SIS |
8,046 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 40V 352A SO8FL |
3,888 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | - | 4.5V, 10V | 0.75mOhm @ 50A, 10V | 2V @ 250µA | 181nC @ 10V | ±20V | 12168pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 40V 53A 378A 5DFN |
2,628 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 600V 16A I2PAK |
6,030 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 16A TO220-3 |
7,686 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 1.1mA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,968 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 46A SO8FL |
2,358 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 46A (Ta), 302A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143nC @ 10V | ±20V | 8862pF @ 25V | - | 3.2W (Ta), 139W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 20V 40A PPAK SO-8 |
5,058 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 40A (Tc) | 4.5V, 10V | 2.25mOhm @ 20A, 10V | 1.6V @ 250µA | 150nC @ 10V | ±16V | 6110pF @ 10V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
NMOS TOLL 100V 2.0 MOHM |
7,128 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 240A (Tc) | 10V | 2.6mOhm @ 80A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5120pF @ 50V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11A TO-220SIS |
8,964 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1550pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 17A 4VSON |
6,660 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1500pF @ 400V | - | 103W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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ON Semiconductor |
FET ENGR DEV-NOT REL |
7,758 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 8.5mOhm @ 76A, 10V | 4V @ 130µA | 34nC @ 10V | ±20V | 2475pF @ 50V | - | 2.4W (Ta), 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 40V 340A |
6,318 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 340A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 250µA | 256nC @ 10V | ±15V | 13000pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MV POWER MOS |
4,482 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 60V 3A SAWN ON FOIL |
8,298 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 196µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
6,120 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 3.9mOhm @ 50A, 10V | 3.8V @ 125µA | 95nC @ 10V | ±20V | 7000pF @ 50V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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IXYS |
MOSFET P-CH 150V 10A TO-252 |
2,268 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 10A (Tc) | 10V | 350mOhm @ 5A, 10V | 4.5V @ 250µA | 36nC @ 10V | ±15V | 2210pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET P-CH 50V 32A TO-252 |
3,762 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 50V | 32A (Tc) | 10V | 39mOhm @ 16A, 10V | 4.5V @ 250µA | 46nC @ 10V | ±15V | 1975pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN |
2,196 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 370A (Tc) | 4.5V, 10V | 0.67mOhm @ 50A, 10V | 2V @ 250µA | 81nC @ 4.5V | ±20V | 12168pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |