Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 472/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N CH 600V 7.4A TO-220F |
7,002 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 7.4A (Tc) | 10V | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26nC @ 10V | ±20V | 1120pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 5.7A TO220 |
6,588 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 50A DPAK-3 |
4,482 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124nC @ 10V | +10V, -20V | 6290pF @ 10V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 60A DPAK-3 |
4,050 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 60A (Ta) | 6V, 10V | 6.3mOhm @ 30A, 10V | 3V @ 1mA | 125nC @ 10V | +10V, -20V | 6510pF @ 10V | - | 90W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
6,498 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.2V @ 250µA | 117nC @ 10V | +20V, -16V | 6150pF @ 15V | - | 5W (Ta), 71.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO252AA |
6,678 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO252AA |
2,772 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
2,196 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 100A D2PAK |
3,312 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V, 10V | 2.7mOhm @ 25A, 10V | 2.1V @ 1mA | 69.5nC @ 5V | ±10V | 9150pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 38A 200A 5DFN |
5,850 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | 4300pF @ 20V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
3,384 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | - | 10V | 400mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | Super Junction | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
5,796 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N CH 100V 35A DPAK |
8,298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
SUPERFET3 650V TO220F PKG |
3,240 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 1mA | 18nC @ 10V | ±30V | 730pF @ 400V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 600MOHM TO220F ZENER |
4,140 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 7.4A (Tc) | 10V | 600mOhm @ 3.7A, 10V | 3.5V @ 250µA | 26nC @ 10V | ±20V | 1120pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252 |
4,626 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V |
2,610 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET P-CH 30V 8-SOIC |
3,978 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 12A TO262 |
5,418 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 720mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2150pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 57.5A 8DFN |
3,006 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 57.5A (Ta), 85A (Tc) | 4.5V, 10V | 1.44mOhm @ 20A, 10V | 2.3V @ 250µA | 114nC @ 10V | ±20V | 6050pF @ 20V | - | 7.4W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 500V TO-220F-3 |
7,668 |
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FRFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 10A (Tc) | 10V | 800mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1395pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 25V 31A 8TSDSON |
6,966 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 40A (Tc) | 4.5V, 10V | 1.45mOhm @ 20A, 10V | 2V @ 250µA | 33nC @ 10V | ±16V | 2300pF @ 12V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4,158 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 72A (Tc) | 10V | 9.1mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | ±20V | 4810pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 45A POLARPAK |
7,110 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2V @ 250µA | 38nC @ 10V | ±20V | 1510pF @ 15V | - | 5.2W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (U) | 10-PolarPAK® (U) |
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Alpha & Omega Semiconductor |
MOSFET N-CH ASYMMETRIC |
5,652 |
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Rohm Semiconductor |
MOSFET N-CH 200V 5A TO-220FN |
7,506 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5A (Ta) | 10V | 720mOhm @ 2.5A, 10V | 4V @ 1mA | 18.6nC @ 10V | ±30V | 292pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 75V 10A TO263 |
6,750 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 10A (Ta), 100A (Tc) | 10V | 10.2mOhm @ 30A, 10V | 4V @ 250µA | 136nC @ 10V | ±25V | 5640pF @ 30V | - | 2.1W (Ta), 268W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 30A 8SON |
2,304 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 40A (Tc) | 4.5V, 10V | 1.5mOhm @ 20A, 10V | 2V @ 250µA | 52nC @ 10V | ±20V | 3400pF @ 15V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI506 |
2,232 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 16A 8SOP-ADV |
7,974 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 11.4mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1600pF @ 10V | - | 1.6W (Ta), 25W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |