Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 378/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Vishay Siliconix |
MOSFET N-CHAN 25V POWERPAK SO-8 |
4,086 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 25V | 71.9A (Ta), 100A (Tc) | 4.5V, 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250µA | 170nC @ 10V | +20V, -16V | 8150pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Rohm Semiconductor |
NCH 600V 9A POWER MOSFET. POWER |
3,580 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 535mOhm @ 2.8A, 10V | 4V @ 1mA | 23nC @ 10V | ±20V | 430pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
POWER MOSFET |
3,204 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PowerFlat™ (5x6) HV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 80V 110A H2PAK-2 |
6,408 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 5mOhm @ 55A, 10V | 4.5V @ 250µA | 60nC @ 10V | ±20V | 4500pF @ 25V | - | 205W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CHANNEL 950V 3.5A IPAK |
7,740 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 950V | 3.5A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5nC @ 10V | ±30V | 220pF @ 100V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 7A DPAK |
2,808 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 900mOhm @ 3.5A, 10V | 5V @ 100µA | 12nC @ 10V | ±30V | 340pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
NCH 650V 4A POWER MOSFET. R6504 |
2,196 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 1.05Ohm @ 1.5A, 10V | 4V @ 130µA | 15nC @ 10V | ±20V | 220pF @ 25V | - | 58W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 4A POWER MOSFET. R6504 |
5,202 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 1.05Ohm @ 1.5A, 10V | 5V @ 130µA | 10nC @ 10V | ±20V | 270pF @ 25V | - | 58W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
700V, A MOSTM N-CHANNEL POWER TR |
5,796 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 3.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.1V @ 250µA | 8nC @ 10V | ±20V | 354pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Rohm Semiconductor |
R6009JND3 IS A POWER MOSFET WITH |
8,496 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22nC @ 15V | ±30V | 645pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 500V 7.5A DPAK |
2,862 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 415pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 620V 8.4A TO-220FP |
5,256 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 8.4A (Tc) | 10V | 750mOhm @ 4A, 10V | 4.5V @ 100µA | 42nC @ 10V | ±30V | 1250pF @ 50V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 550V D2PAK |
5,220 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
4.5V DRIVE NCH MOSFET. POWER MOS |
7,830 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 1.7mOhm @ 35A, 10V | 2.5V @ 1mA | 68nC @ 10V | ±20V | 4060pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 600V 11A IPAK |
3,510 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 27nC @ 10V | ±25V | 790pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
TRENCH 6 40V SL NFET |
7,074 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 170µA | 65nC @ 10V | ±20V | 4300pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | 8-PowerSMD, Gull Wing |
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
5,184 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 22.5A (Ta), 80A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2500pF @ 50V | - | 8.3W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
PSMNR58-30YLH/SOT1023/4 LEADS |
7,308 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 300A | - | - | - | 98nC @ 10V | - | 6.16nF @ 10V | Schottky Diode (Body) | - | 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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STMicroelectronics |
MOSFET N-CH 525V 6A DPAK |
6,930 |
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SuperFREDmesh3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 1.15Ohm @ 3A, 10V | 4.5V @ 50µA | 33nC @ 10V | ±30V | 870pF @ 50V | - | 90W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 950V 3.5A TO220 |
3,744 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 3.5A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 12.5nC @ 10V | 30V | 220pF @ 100V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 680V TO-220FP |
6,624 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
RQ3P300BE IS A POWER MOSFET WITH |
6,588 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Ta), 36A (Tc) | 10V | 21mOhm @ 10A, 10V | 4V @ 200µA | 19.1nC @ 10V | ±20V | 1250pF @ 50V | - | 2W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Rohm Semiconductor |
RS1E220AT IS A POWER MOSFET, SUI |
3,508 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 76A (Tc) | 4.5V, 10V | 4.1mOhm @ 22A, 10V | 2.5V @ 2mA | 130nC @ 10V | ±20V | 5850pF @ 15V | - | 3W (Ta) | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
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Rohm Semiconductor |
RS3E180AT IS A POWER MOSFET FOR |
7,920 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 5.4mOhm @ 18A, 10V | 2.5V @ 5mA | 160nC @ 10V | ±20V | 7200pF @ 15V | - | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 600V 6A I2PAK |
8,064 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4.5V @ 100µA | 46nC @ 10V | 30V | 905pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 55V 90A TO220 |
4,932 |
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DeepGATE™, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 8mOhm @ 45A, 10V | 4V @ 250µA | 90nC @ 10V | ±20V | 4800pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
RSJ451N04FRAIS THE HIGH RELIABIL |
3,222 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 45A (Tc) | 10V | 13.5mOhm @ 25A, 10V | 3V @ 1mA | 43nC @ 10V | ±20V | 2400pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 500V 7.5A DPAK |
6,912 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 560mOhm @ 3.7A, 10V | 4V @ 250µA | 20nC @ 10V | ±25V | 570pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RJ1G08CGN IS A POWER MOSFET WITH |
5,562 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Ta) | 4.5V, 10V | 7.7mOhm @ 80A, 10V | 2.5V @ 50µA | 55nC @ 10V | ±20V | 2600pF @ 30V | - | 96W (Ta) | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T6 40V LL LFPAK |
5,580 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 44A (Ta), 258A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 180µA | 109nC @ 10V | ±20V | 6330pF @ 20V | - | 3.9W (Ta), 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |