Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 347/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Infineon Technologies |
MOSFET P-CH 60V 1.17A SOT-223 |
3,834 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | ±20V | 160pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N CH 100V 6.8A TO252-3 |
40,242 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.8A (Tc) | 5V, 10V | 160mOhm @ 3.4A, 10V | 2.8V @ 250µA | 3.61nC @ 10V | ±20V | 225pF @ 50V | - | 14.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 16A PPAK 1212-8 |
5,706 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.3V @ 250µA | 23nC @ 10V | ±20V | 880pF @ 10V | - | 3.5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 100V 16.9A TO-252 |
4,104 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16.9A (Tc) | 4.5V, 10V | 66mOhm @ 6.6A, 10V | 3V @ 250µA | 30nC @ 10V | ±20V | 860pF @ 50V | - | 2.1W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 50A PPAK 1212-8S |
4,104 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 50A (Tc) | 1.8V, 4.5V | 4.5mOhm @ 20A, 4.5V | 900mV @ 250µA | 300nC @ 10V | ±8V | 8840pF @ 15V | - | 4.8W (Ta), 57W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Nexperia |
MOSFET N-CH 60V 54A LFPAK |
3,888 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 54A (Tc) | 5V | 11mOhm @ 15A, 10V | 2.1V @ 1mA | - | ±10V | 2769pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Nexperia |
MOSFET N-CH 60V LFPAK33 |
8,406 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 61A (Tc) | 10V | 11.3mOhm @ 15A, 10V | 4V @ 1mA | 23nC @ 10V | ±20V | 1368pF @ 30V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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ON Semiconductor |
MOSFET N-CH 100V 3.3A 8-MLP |
8,856 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.3A (Ta), 7.5A (Tc) | 4.5V, 10V | 103mOhm @ 3.3A, 10V | 2.2V @ 250µA | 6nC @ 10V | ±20V | 310pF @ 50V | - | 2.3W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET P-CH 30V POWERPAK 1212-8 |
6,156 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 30V | 22.4A (Ta), 60A (Tc) | 4.5V, 10V | 4.9mOhm @ 15A, 10V | 2.2V @ 250µA | 84nC @ 10V | +16V, -20V | 3490pF @ 15V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Infineon Technologies |
N-CHANNEL_30/40V |
2,322 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 5.5mOhm @ 25A, 10V | 2V @ 13µA | 23nC @ 10V | ±16V | 1209pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223 |
7,506 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | ±20V | 368pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N CH 150V 18A DPAK |
3,562 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 77mOhm @ 12A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 765pF @ 75V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 80V 9.5A PWDI3333-8 |
7,866 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 9.5A (Ta), 35A (Tc) | 6V, 10V | 16mOhm @ 12A, 10V | 3V @ 250µA | 34nC @ 10V | ±20V | 1949pF @ 40V | - | 2.2W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Microchip Technology |
MOSFET N-CH 100V 0.2A SOT23-3 |
5,004 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 200mA (Tj) | 5V, 10V | 4Ohm @ 500mA, 10V | 2.4V @ 1mA | - | ±20V | 50pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 150V 1.6A 3SSOT |
2,736 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 1.6A (Ta) | 6V, 10V | 261mOhm @ 1.6A, 10V | 4V @ 250µA | 5nC @ 10V | ±20V | 225pF @ 75V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET BVDSS: 41V 60V,SO-8,T&R,2 |
4,104 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10.8A (Ta) | 4.5V, 10V | 9.5mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | ±20V | 1925pF @ 30V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8-SOIC |
2,754 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6.8mOhm @ 16A, 10V | 2.25V @ 250µA | 27nC @ 4.5V | ±20V | 2080pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 2.4A DPAK |
6,372 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 3.4Ohm @ 1.2A, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 565pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET P-CH 100V 10A |
6,192 |
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STripFET™ F6 | P-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 10V | 180mOhm @ 5A, 10V | 4V @ 250µA | 16.5nC @ 10V | ±20V | 864pF @ 80V | - | 40W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 50A 8-DFN |
3,312 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 48A (Ta), 50A (Tc) | 2.5V, 10V | 1.8mOhm @ 20A, 10V | 1.2V @ 250µA | 105nC @ 10V | ±12V | 4175pF @ 15V | - | 6.2W (Ta), 83.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 40V 120A LFPAK56 |
8,604 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Ta) | 10V | 3.5mOhm @ 25A, 10V | 4V @ 1mA | 53nC @ 10V | +20V, -10V | 3441pF @ 25V | - | 115W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 100V 40A TDSON-8 |
6,894 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Ta), 40A (Tc) | 4.5V, 10V | 26.5mOhm @ 20A, 10V | 2.4V @ 43µA | 21nC @ 10V | ±20V | 1600pF @ 50V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Microchip Technology |
MOSFET N-CH 60V 310MA TO92-3 |
6,120 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 310mA (Tj) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±30V | 60pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 28A 5X6DFN |
3,708 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.5A (Ta), 28A (Tc) | 4.5V, 10V | 37mOhm @ 10A, 10V | 2.7V @ 250µA | 44nC @ 10V | ±20V | 2000pF @ 50V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 150V 26A DPAK-3 |
2,232 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 26A (Tc) | 4.5V, 10V | 42mOhm @ 26A, 10V | 2.8V @ 250µA | 39nC @ 10V | ±20V | 1760pF @ 75V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 150V 26A DPAK |
2,016 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 26A (Tc) | 10V | 40mOhm @ 26A, 10V | 4V @ 250µA | 18.6nC @ 10V | ±20V | 1285pF @ 75V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 11.3A 8TDSON |
4,338 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 11.3A (Tc) | 10V | 125mOhm @ 5.7A, 10V | 4V @ 25µA | 8.7nC @ 10V | ±20V | 680pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFETN-CH 100VPOWERDI5060-8 |
4,392 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 10.7A (Ta), 113A (Tc) | 6V, 10V | 8.8mOhm @ 13A, 10V | 4V @ 250µA | 56.4nC @ 10V | ±20V | 4.468nF @ 50V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET P-CH 30V 12A DPAK |
4,518 |
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DeepGATE™, STripFET™ VI | P-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 30mOhm @ 6A, 10V | 2.5V @ 250µA | 12nC @ 4.5V | ±20V | 1450pF @ 25V | - | 40W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 60A POWERPAKSO-8 |
7,128 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 4.4mOhm @ 10A, 10V | 2.5V @ 250µA | 260nC @ 10V | ±20V | 10700pF @ 25V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |