Transistors - FETs, MOSFETs - Single
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CategorySemiconductors / Transistors / Transistors - FETs, MOSFETs - Single
Records 29,970
Page 254/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 600V 29A D2PAK |
6,336 |
|
Automotive, AEC-Q101, MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 105mOhm @ 14.5A, 10V | 4V @ 250µA | 83.6nC @ 10V | ±25V | 2722pF @ 100V | - | 210W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 100V 75A TO268 |
8,298 |
|
Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 21mOhm @ 500mA, 10V | 4.5V @ 250µA | 215nC @ 10V | ±20V | 8100pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 120A TO-264 |
8,208 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 300V | 120A (Tc) | 10V | 27mOhm @ 60A, 10V | 5V @ 4mA | 150nC @ 10V | ±20V | 8630pF @ 25V | - | 1130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Rohm Semiconductor |
MOSFET N-CH 600V 46A TO247 |
2,100 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Tc) | 10V | 98mOhm @ 23A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 6230pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Microchip Technology |
MOSFET P-CH 60V 750MA 3TO-39 |
8,100 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 750mA (Tj) | 5V, 10V | 900mOhm @ 3.5A, 10V | 3.5V @ 10mA | - | ±20V | 450pF @ 25V | - | 360mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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IXYS |
MOSFET N-CH 500V 14A TO220 |
61,776 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 265mOhm @ 13A, 10V | 5V @ 4mA | 42nC @ 10V | ±30V | 2220pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 4A PWRFLT8X8HV |
5,958 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Ta), 34A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | ±25V | 4650pF @ 100V | - | 3W (Ta), 208W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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IXYS |
MOSFET N-CH 300V 140A TO-264 |
7,272 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 300V | 140A (Tc) | 10V | 24mOhm @ 70A, 10V | 5V @ 500µA | 185nC @ 10V | ±20V | 14800pF @ 25V | - | - | - | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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Vishay Siliconix |
MOSFET N-CH 600V 40A SUPER247 |
8,244 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 130mOhm @ 24A, 10V | 5V @ 250µA | 330nC @ 10V | ±30V | 7970pF @ 25V | - | 570W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Rohm Semiconductor |
MOSFET N-CH 600V 46A TO247 |
10,236 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Tc) | 10V | 90mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | ±30V | 6000pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 120A PLUS247 |
8,496 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 120A (Tc) | 10V | 17mOhm @ 60A, 10V | 4V @ 8mA | 300nC @ 10V | ±20V | 9100pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1.5KV 4A TO263 |
6,144 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1500V | 4A (Tc) | 10V | 6Ohm @ 500mA, 10V | 5V @ 250µA | 44.5nC @ 10V | ±30V | 1576pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 87A SUPER247 |
7,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 87A (Tc) | 10V | 29mOhm @ 45A, 10V | 4V @ 250µA | 591nC @ 10V | ±30V | 11826pF @ 100V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 34A PLUS247 |
6,720 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 34A (Tc) | 10V | 240mOhm @ 17A, 10V | 5V @ 8mA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 55A TO-264AA |
7,920 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 90mOhm @ 27.5A, 10V | 4.5V @ 8mA | 330nC @ 10V | ±20V | 9400pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Transphorm |
GANFET N-CH 650V 36A TO247 |
6,984 |
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- | N-Channel | GaNFET (Gallium Nitride) | 650V | 36A (Tc) | 10V | 60mOhm @ 22A, 8V | 2.6V @ 700µA | 42nC @ 8V | ±18V | 2200pF @ 400V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1KV 24A TO-264AA |
7,092 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 267nC @ 10V | ±20V | 8700pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 100V 180A SOT-227B |
13,374 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 8mOhm @ 500mA, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9100pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1500V 8A TO-264 |
14,760 |
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- | N-Channel | MOSFET (Metal Oxide) | 1500V | 8A (Tc) | 20V | 3.6Ohm @ 4A, 20V | 8V @ 250µA | 250nC @ 15V | ±30V | 8000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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IXYS |
2500V TO 4500V VERY HI VOLT PWR |
6,024 |
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- | N-Channel | MOSFET (Metal Oxide) | 4500V | 1A (Tc) | 10V | 80Ohm @ 50mA, 10V | 6V @ 250µA | 46nC @ 10V | ±20V | 1700pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247HV | TO-247-3 Variant |
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IXYS |
MOSFET N-CH 1000V 22A PLUS247 |
7,740 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 22A (Tc) | 10V | 600mOhm @ 11A, 20V | 5V @ 250µA | 270nC @ 15V | ±30V | 7050pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 900V 26A SOT-227B |
6,456 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 5V @ 8mA | 240nC @ 10V | ±20V | 10800pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Transphorm |
GANFET N-CH 650V 50A TO247 |
7,320 |
|
- | N-Channel | GaNFET (Gallium Nitride) | 650V | 50A (Tc) | 10V | 41mOhm @ 32A, 8V | 2.65V @ 700µA | 42nC @ 8V | ±18V | 2197pF @ 400V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 230A SOT-227B |
18,612 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 230A (Tc) | 10V | 6mOhm @ 500mA, 10V | 4V @ 8mA | 570nC @ 10V | ±20V | 19000pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 80A SOT-227B |
41 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 66A (Tc) | 10V | 55mOhm @ 500mA, 10V | 4.5V @ 8mA | 380nC @ 10V | ±20V | 9890pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1KV 36A SOT-227B |
9,204 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 36A (Tc) | 10V | 240mOhm @ 500mA, 10V | 5V @ 8mA | 380nC @ 10V | ±20V | 9200pF @ 25V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 1000V 145A SP6 |
5,130 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 145A (Tc) | 10V | 78mOhm @ 72.5A, 10V | 5V @ 20mA | 1068nC @ 10V | ±30V | 28500pF @ 25V | - | 3250W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi |
MOSFET N-CH 100V 860A SP6 |
177 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 860A (Tc) | 10V | 1.6mOhm @ 275A, 10V | 4V @ 12mA | 2100nC @ 10V | ±30V | 60000pF @ 25V | - | 2500W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | SP6 |
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Microsemi |
MOSFET N-CH 1200V 143A ISOTOP |
7,110 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 143A (Tc) | 20V | 17mOhm @ 100A, 20V | 2.3V @ 2mA | 360nC @ 20V | +25V, -10V | 5960pF @ 1000V | - | 600W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Infineon Technologies |
MOSFET N-CH 30V 1.4A SOT-363 |
6,714 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | ±20V | 94pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |