Transistors

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Records 64,903

Page 759/2164

Part Number	Description	In Stock
DMN601DWKQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N-CHAN 41V 60V SOT363 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock43,566
DMN601VK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.305A SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock23,880
DMN601VKQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.305A SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock5,058
DMN6022SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V 60V SO-8 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 30V Power - Max: 1.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock4,734
DMN6022SSS-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V SO-8 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock3,060
DMN6040SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 5A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock743,190
DMN6040SSDQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N-CH 60V 5.0A SO-8 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock23,232
DMN6066SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3.3A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock200,604
DMN6070SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3.3A 8-SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Power - Max: 1.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock120,936
DMN61D8LVT-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.63A TSOT26 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock4,050
DMN61D8LVT-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.63A TSOT26 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock55,770
DMN61D8LVTQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.63A TSOT26 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock3,438
DMN61D8LVTQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.63A TSOT26 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 630mA Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 12.9pF @ 12V Power - Max: 820mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock118
DMN61D9UDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock5,598
DMN61D9UDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock817,104
DMN62D0UDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock4,266
DMN62D0UDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Power - Max: 320mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock150,498
DMN62D0UT-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT523 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock4,212
DMN62D0UT-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.35A SOT523 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock4,932
DMN63D0LT-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N-CH 100V SOT523 Manufacturer: Diodes Incorporated Series: - FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock25,554
DMN63D1LDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.25A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock6,966
DMN63D1LDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.25A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock3,598
DMN63D1LV-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 550MA SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 940mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock6,318
DMN63D1LV-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 550MA SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.392nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Power - Max: 940mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock7,560
DMN63D8LDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.22A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock2,790
DMN63D8LDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.22A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock2,680,914
DMN63D8LDWQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.22A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock28,116
DMN63D8LV-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.26A SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 260mA Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock582,486
DMN65D8LDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.18A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock1,614,312
DMN65D8LDWQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 180MA SOT363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,146

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