Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 758/2164

Part Number	Description	In Stock
DMN32D2LDF-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.4A SOT353 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) Common Source FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Power - Max: 280mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SOT-353	In Stock6,192
DMN32D2LV-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.4A SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Power - Max: 400mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock8,730
DMN32D4SDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.65A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock7,092
DMN32D4SDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.65A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 650mA Rds On (Max) @ Id, Vgs: 400mOhm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock24,534
DMN33D8LDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.25A Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock4,302
DMN33D8LDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 0.25A Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 250mA Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V Power - Max: 350mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock5,454
DMN3401LDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V SOT363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock2,790
DMN3401LDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 25V-30V SOT363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock6,498
DMN4026SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 7A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock2,340
DMN4026SSDQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 7A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 7A Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock3,816
DMN4027SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 5.4A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.4A Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 604pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock26,856
DMN4031SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 5.2A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Power - Max: 1.42W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock7,902
DMN4031SSDQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 5.2A 8SOIC Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 31mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 20V Power - Max: 1.42W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock3,924
DMN4034SSD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 4.8A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock3,582
DMN5010VAK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock28,908
DMN53D0LDW-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.36A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock238,782
DMN53D0LDW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.36A SOT363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 25V Power - Max: 310mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock1,208,466
DMN5L06DMK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.305A SOT-26 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 400mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock123,066
DMN5L06DMKQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 305MA SOT26 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 400mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock3,872
DMN5L06DW-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT-363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock4,878
DMN5L06DWK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.305A SOT-363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock1,755,840
DMN5L06DWK-7-01 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 41V-60V SOT363 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock7,524
DMN5L06V-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock7,884
DMN5L06VA-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 150mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock7,722
DMN5L06VAK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock8,208
DMN5L06VK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.28A SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock700,986
DMN5L06VK-7-G Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N-CH SOT23 Manufacturer: Diodes Incorporated Series: * FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	In Stock4,230
DMN5L06VKQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 50V 280MA SOT563 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock161,437
DMN601DMK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.51A SOT26 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 510mA Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 304nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-26	In Stock653,022
DMN601DWK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.305A SOT-363 Manufacturer: Diodes Incorporated Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock727,254

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