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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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DMN2028UFU-13
DMN2028UFU-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 7.9A UDFN2020-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
In Stock8,010
DMN2028UFU-7
DMN2028UFU-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 7.5A UDFN2030-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 20.2mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 887pF @ 10V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
In Stock509
DMN2029USD-13
DMN2029USD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 5.8A 8SO

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1171pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock7,596
DMN2029UVT-13
DMN2029UVT-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock8,046
DMN2029UVT-7
DMN2029UVT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,148
DMN2036UCB4-7
DMN2036UCB4-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFETN-CHAN 24V X2-WLB1616-4

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.45W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLBGA
  • Supplier Device Package: X2-WLB1616-4
In Stock26,094
DMN2040LSD-13
DMN2040LSD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 7A 8-SOIC

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
In Stock7,236
DMN2040LTS-13
DMN2040LTS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 6.7A 8TSSOP

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 10V
  • Power - Max: 890mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock5,580
DMN2041LSD-13
DMN2041LSD-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 7.63A 8SO

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.63A
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
  • Power - Max: 1.16W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock668,706
DMN2041UFDB-13
DMN2041UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4.7A 6UDFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock6,552
DMN2041UFDB-7
DMN2041UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 4.7A 6UDFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.7A
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V
  • Power - Max: 1.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock4,140
DMN2050LFDB-13
DMN2050LFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 3.3A 6UDFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
  • Power - Max: 730mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock82,368
DMN2050LFDB-7
DMN2050LFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 3.3A 6UDFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 389pF @ 10V
  • Power - Max: 730mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock6,084
DMN2053UVT-13
DMN2053UVT-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26 T&R

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock6,714
DMN2053UVT-7
DMN2053UVT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26 T&R

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: TSOT-26
In Stock6,318
DMN21D1UDA-7B
DMN21D1UDA-7B

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 20V X2DFN0806-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 455mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V
  • Power - Max: 310mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X2-DFN0806-6
In Stock5,868
DMN2215UDM-7
DMN2215UDM-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 2A SOT-26

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 10V
  • Power - Max: 650mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
In Stock24,450
DMN2300UFL4-7
DMN2300UFL4-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 2.11A 6DFN

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
  • Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 128.6pF @ 25V
  • Power - Max: 1.39W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: X2-DFN1310-6 (Type B)
In Stock3,402
DMN2400UV-7
DMN2400UV-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 1.33A SOT563

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.33A
  • Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 16V
  • Power - Max: 530mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock371,334
DMN26D0UDJ-7
DMN26D0UDJ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.24A SOT963

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 240mA
  • Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock93,216
DMN2990UDJ-7
DMN2990UDJ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.45A SOT-963

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 450mA
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
  • Power - Max: 350mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock247,410
DMN2990UDJQ-7
DMN2990UDJQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CHANNEL 450MA SOT963

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.6pF @ 16V
  • Power - Max: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-963
  • Supplier Device Package: SOT-963
In Stock5,220
DMN3012LDG-13
DMN3012LDG-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 25V-30V POWERDI333

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
In Stock8,712
DMN3012LDG-7
DMN3012LDG-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 25V-30V POWERDI333

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
In Stock2,682
DMN3012LEG-13
DMN3012LEG-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 25V-30V POWERDI333

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock8,244
DMN3012LEG-7
DMN3012LEG-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 25V-30V POWERDI333

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock6,516
DMN3012LFG-13
DMN3012LFG-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 30V POWERDI3333

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8
In Stock5,454
DMN3012LFG-7
DMN3012LFG-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 30V POWERDI3333

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4.5V, 12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V, 1480pF @ 15V
  • Power - Max: 2.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8
In Stock3,456
DMN3013LDG-13
DMN3013LDG-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 25V-30V POWERDI333

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 2.16W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
In Stock6,408
DMN3013LDG-7
DMN3013LDG-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 25V-30V POWERDI333

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
  • Power - Max: 2.16W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerLDFN
  • Supplier Device Package: PowerDI3333-8 (Type D)
In Stock2,628