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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
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In Stock
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DMN1250UFEL-7
DMN1250UFEL-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V 24V U-QFN1515-1

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 8 N-Channel, Common Gate, Common Source
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 2A
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V
  • Power - Max: 660mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-UFQFN Exposed Pad
  • Supplier Device Package: U-QFN1515-12
In Stock949
DMN13M9UCA6-7
DMN13M9UCA6-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CHANNEL X3-DSN3518-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V
  • Power - Max: 2.67W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X3-DSN3518-6
In Stock6,768
DMN16M0UCA6-7
DMN16M0UCA6-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V X4-DSN2112-

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock7,704
DMN16M9UCA6-7
DMN16M9UCA6-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CHANNEL X3-DSN2718-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, No Lead
  • Supplier Device Package: X3-DSN2718-6
In Stock2,196
DMN2004DMK-7
DMN2004DMK-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.54A SOT-26

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 225mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
In Stock672,162
DMN2004DWK-7
DMN2004DWK-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.54A SOT-363

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock545,082
DMN2004DWKQ-7
DMN2004DWKQ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2NCH 20V 540MA SOT363

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 200mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock2,754
DMN2004VK-7
DMN2004VK-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.54A SOT-563

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 250mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
In Stock265,212
DMN2005DLP4K-7
DMN2005DLP4K-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 0.3A 6-DFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 300mA
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 900mV @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 400mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: X2-DFN1310-6 (Type B)
In Stock298,062
DMN2008LFU-13
DMN2008LFU-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2NCH 20V 14.5A UDFN2030

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
In Stock5,814
DMN2008LFU-7
DMN2008LFU-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CHA 20V 14.5A DFN2030

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14.5A
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250A
  • Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
In Stock4,608
DMN2010UDZ-7
DMN2010UDZ-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 11A U-DFN2535-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 11A
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 5.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2665pF @ 10V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2535-6
In Stock6,588
DMN2011UFX-7
DMN2011UFX-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 12.2A DFN2050-4

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
  • Power - Max: 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VFDFN Exposed Pad
  • Supplier Device Package: V-DFN2050-4
In Stock69,066
DMN2013UFX-7
DMN2013UFX-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 10A 6-DFN

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57.4nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2607pF @ 10V
  • Power - Max: 2.14W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VFDFN Exposed Pad
  • Supplier Device Package: W-DFN5020-6
In Stock2,718
DMN2014LHAB-7
DMN2014LHAB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 9A 6-UDFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
  • Power - Max: 800mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6 (Type B)
In Stock28,272
DMN2016LFG-7
DMN2016LFG-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 5.2A 8UDFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A
  • Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1472pF @ 10V
  • Power - Max: 770mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: U-DFN3030-8
In Stock174,336
DMN2016LHAB-7
DMN2016LHAB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 7.5A 6UDFN

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.5A
  • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2030-6
In Stock8,208
DMN2016UFX-7
DMN2016UFX-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V V-DFN2050-4

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
  • Power - Max: 1.07W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-VFDFN Exposed Pad
  • Supplier Device Package: V-DFN2050-4
In Stock8,136
DMN2016UTS-13
DMN2016UTS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 8.58A 8-TSSOP

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 8.58A
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V
  • Power - Max: 880mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock280,842
DMN2019UTS-13
DMN2019UTS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 5.4A TSSOP-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A
  • Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 780mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock451
DMN2022UNS-13
DMN2022UNS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 8V 24V POWERDI3333-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
In Stock5,454
DMN2022UNS-7
DMN2022UNS-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2 N-CH 20V POWERDI3333-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
  • Power - Max: 1.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8
In Stock7,920
DMN2023UCB4-7
DMN2023UCB4-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH X1-WLB1818-4

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 24V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V
  • Power - Max: 1.45W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-XFBGA, WLBGA
  • Supplier Device Package: X1-WLB1818-4
In Stock3,978
DMN2024UDH-7
DMN2024UDH-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V U-DFN3030-8

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 950mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: U-DFN3030-8
In Stock6,102
DMN2024UTS-13
DMN2024UTS-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSSOP-8 T&R

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V
  • Power - Max: 890mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
In Stock8,658
DMN2024UVT-13
DMN2024UVT-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock3,816
DMN2024UVT-7
DMN2024UVT-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V TSOT26

  • Manufacturer: Diodes Incorporated
  • Series: *
  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
In Stock5,904
DMN2025UFDB-13
DMN2025UFDB-13

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock5,742
DMN2025UFDB-7
DMN2025UFDB-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET BVDSS: 8V-24V U-DFN2020-6

  • Manufacturer: Diodes Incorporated
  • Series: -
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
  • Power - Max: 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: U-DFN2020-6 (Type B)
In Stock5,760
DMN2028UFDH-7
DMN2028UFDH-7

Diodes Incorporated

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 20V 6.8A POWERDI

  • Manufacturer: Diodes Incorporated
  • Series: Automotive, AEC-Q101
  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3030-8
In Stock3,834