Transistors

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Records 64,903

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Part Number	Description	In Stock
DMC1018UPD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V POWERDI5060 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 9.5A, 6.9A Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 6V Power - Max: 2.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8	In Stock5,598
DMC1028UFDB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V/20V 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V Power - Max: 1.36W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock6,930
DMC1028UFDB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V/20V 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V, 20V Current - Continuous Drain (Id) @ 25°C: 6A, 3.4A Rds On (Max) @ Id, Vgs: 25mOhm @ 5.2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 787pF @ 6V Power - Max: 1.36W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock120,420
DMC1029UFDB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock5,328
DMC1029UFDB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock26,570
DMC1030UFDB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V 24V U-DFN2020-6 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V Power - Max: 1.36W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock6,984
DMC1030UFDB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V 24V U-DFN2020-6 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 3.9A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V, 59mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 4.5V, 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V, 1028pF @ 6V Power - Max: 1.36W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock4,374
DMC1030UFDBQ-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 5.1A UDFN2020 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V Power - Max: 1.36W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock2,844
DMC1030UFDBQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 5.1A UDFN2020 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.1A Rds On (Max) @ Id, Vgs: 34mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1003pF @ 6V Power - Max: 1.36W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock7,074
DMC1229UFDB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V U-DFN2020-6 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock2,464
DMC1229UFDB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V U-DFN2020-6 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock22,500
DMC2004DWK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT-363 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 250mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	In Stock2,359,068
DMC2004LPK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6-DFN Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA, 600mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 500mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X1-DFN1612-6	In Stock29,970
DMC2004VK-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT-563 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock244,794
DMC2020USD-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 7.8A/6.3A 8SO Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.8A, 6.3A Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1149pF @ 10V Power - Max: 1.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	In Stock74,916
DMC2025UFDB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V U-DFN2020-6 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock3,060
DMC2025UFDB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V U-DFN2020-6 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock8,856
DMC2038LVT-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V TSOT26 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A, 2.6A Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock1,024,398
DMC2038LVTQ-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V 24V TSOT26 Manufacturer: Diodes Incorporated Series: Automotive, AEC-Q101 FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate, 1.8V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 2.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, 74mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V, 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 10V, 705pF @ 10V Power - Max: 800mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock2,642
DMC2041UFDB-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock3,438
DMC2041UFDB-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6UDFN Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.2A Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 713pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	In Stock8,556
DMC2053UVT-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock6,030
DMC2053UVT-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 3.2A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V, 5.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V, 440pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock3,402
DMC2057UVT-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock8,190
DMC2057UVT-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET BVDSS: 8V-24V TSOT26 T&R Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel Complementary FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V, 70mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V, 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 416pF @ 10V, 536pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	In Stock8,622
DMC21D1UDA-7B Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V X2DFN0806-6 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 455mA (Ta), 328mA (Ta) Rds On (Max) @ Id, Vgs: 990mOhm @ 100mA, 4.5V, 1.9Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.41nC @ 4.5V, 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 31pF @ 15V, 28.5pF @ 15V Power - Max: 300mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X2-DFN0806-6	In Stock3,888
DMC2400UV-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock205,884
DMC2400UV-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock1,597,434
DMC2450UV-13 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock8,622
DMC2450UV-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT563 Manufacturer: Diodes Incorporated Series: - FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	In Stock71,320

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